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Interaction of Cu and CoSi2

Published online by Cambridge University Press:  25 February 2011

C. L. Shepard
Affiliation:
Physics Dept., State University of New York, Albany, NY, 12222
W. A. Lanford
Affiliation:
Physics Dept., State University of New York, Albany, NY, 12222
Y-T. Shy
Affiliation:
Materials Engineering Dept., RPI, Troy, NY, 12180
S. Murarka
Affiliation:
Materials Engineering Dept., RPI, Troy, NY, 12180
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Abstract

Interaction of thin film Cu and CoSi2 has been studied using Rutherford backscattering spectroscopy and sheet resistance measurements. For temperatures ≤ 600° C. , no measurable diffusion of Cu into CoSi2 is observed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Murarka, S.P., J. Vac. Sci. Technol. B4, 1325, (1986).Google Scholar
2. Maissel, L.I., in “Handbook of Thin Film Technology”, Editors: Maissel, L.I. and Glang, R., (McGraw-Hill, NY, 1970), p. 1321.Google Scholar
3. Hansen, M., “Composition of Binary Alloys”, (McGraw-Hill, NY, 1958), p. 469.Google Scholar
4. Bean, J.C. and Poate, J.M., Appl. Phys. Lett. 37, 203 (1980)Google Scholar