Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-27T01:46:19.108Z Has data issue: false hasContentIssue false

Integration of Porous Silicon with Sol-Gel Derived Ceramic Films

Published online by Cambridge University Press:  02 August 2011

S. Stolyarova
Affiliation:
Kidron Microelectronics Research Center, Technion – Israel Institute of Technology, Haifa, 32000, Israel
B. Malic
Affiliation:
Josef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
S. Javoric
Affiliation:
Josef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
A. El-Bahar
Affiliation:
Kidron Microelectronics Research Center, Technion – Israel Institute of Technology, Haifa, 32000, Israel
M. Kosec
Affiliation:
Josef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
Y. Nemirovsky
Affiliation:
Kidron Microelectronics Research Center, Technion – Israel Institute of Technology, Haifa, 32000, Israel
Get access

Abstract

Direct integration of sol-gel derived ceramic films with porous silicon, without buffer layers, has been demonstrated. The effects of ceramic type, solvent type, solution concentration, as well as, porous silicon layer thickness, porosity and preparation conditions, on the quality and microstructure of sol-gel films/porous silicon integrated systems have been studied. The following ceramic compositions have been applied to porous silicon as protective coatings: PZT (PbZr0.3Ti0.7O3), PLZT (Pb0.925La0.055Zr0.3Ti0.7O3), ZrO2, TiO2, with 2-methoxyethanol and 2-ethoxyethanol solvents, 0.5 and 0.1 M precursor solution concentrations. The LSCO (La0.5Sr0.5CO.3) water based sol-gels have been deposited for electroconductive purposes.

The best compositions for integration, giving transparent, mirror-like, uniform ceramic films with fine morphology and strong adhesion, were found to be the TiO2 and ZrO2 as well as, the diluted (0.1 M) PZT (PbZr0.3Ti0.7O3) sol-gel precursors. Conductive LSCO sol-gel derived films showed improved wetting and stronger adhesive interaction with porous silicon, as compared to polished silicon wafers.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Cahnam, L., “Properties of Porous Silicon”, INSPEC Data Review Series, No18, 1997.Google Scholar
2. Muralt, P., Maeder, T., Sagalowicz, L., Hiboux, S., Scalese, S., Naumovic, D., Agostino, R.G., Xanthopoulos, N., Mathieu, H.J., Patthey, L., and Bullock, E.L., Journal of Applied Physics, 83, 3835 (1998).Google Scholar
3. Olding, T., Leclerc, B., and Sayer, M., Integrated Ferroelectrics 26, 225 (1999).Google Scholar
4. Cobianu, C., Savaniu, C., Buiu, O., Dascalu, D., Zaharescu, M., Parlog, C., Van-der-Berg, A., and Pecz, B., Sensors and Actuators B, 43, 114 (1997).Google Scholar
5. Roger, J.A., Blanchin, M.G., Canut, B., Teodorescu, V.S., Letant, S., Vial, J.C., Tin oxide growth in nanoporous silicon: an approach to an efficient solid state electrode, Semiconductor Science and Technology, 14, L29 (1999).Google Scholar
6. Gaponenko, N.V., Mudryi, A.V., Sergeev, O.V., Pivin, J.C., Baran, A.S., Stepanova, E.A., Ratko, A.I., and McGilp, J.F., Physica Status Solidi A, 165, 131 (1998).Google Scholar
7. Gaponenko, N.V., Mudryi, A.V., Sergeev, O.V., Stepikhova, M., Palmetshofer, L., Jantsch, W., Pivin, J.C., Hamilton, B., Baran, A.S., and Ratko, A.I., On the origin of 1.5 μ luminescence in porous silicon coated with sol-gel derived erbium-doped Fe2O3 films, J. of Luminescence, 80, 399 (1998).Google Scholar