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Integration of Porous Silicon with Sol-Gel Derived Ceramic Films

Published online by Cambridge University Press:  02 August 2011

S. Stolyarova
Affiliation:
Kidron Microelectronics Research Center, Technion – Israel Institute of Technology, Haifa, 32000, Israel
B. Malic
Affiliation:
Josef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
S. Javoric
Affiliation:
Josef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
A. El-Bahar
Affiliation:
Kidron Microelectronics Research Center, Technion – Israel Institute of Technology, Haifa, 32000, Israel
M. Kosec
Affiliation:
Josef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
Y. Nemirovsky
Affiliation:
Kidron Microelectronics Research Center, Technion – Israel Institute of Technology, Haifa, 32000, Israel
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Abstract

Direct integration of sol-gel derived ceramic films with porous silicon, without buffer layers, has been demonstrated. The effects of ceramic type, solvent type, solution concentration, as well as, porous silicon layer thickness, porosity and preparation conditions, on the quality and microstructure of sol-gel films/porous silicon integrated systems have been studied. The following ceramic compositions have been applied to porous silicon as protective coatings: PZT (PbZr0.3Ti0.7O3), PLZT (Pb0.925La0.055Zr0.3Ti0.7O3), ZrO2, TiO2, with 2-methoxyethanol and 2-ethoxyethanol solvents, 0.5 and 0.1 M precursor solution concentrations. The LSCO (La0.5Sr0.5CO.3) water based sol-gels have been deposited for electroconductive purposes.

The best compositions for integration, giving transparent, mirror-like, uniform ceramic films with fine morphology and strong adhesion, were found to be the TiO2 and ZrO2 as well as, the diluted (0.1 M) PZT (PbZr0.3Ti0.7O3) sol-gel precursors. Conductive LSCO sol-gel derived films showed improved wetting and stronger adhesive interaction with porous silicon, as compared to polished silicon wafers.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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