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The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

Published online by Cambridge University Press:  01 February 2011

Degang Cheng  and
Eric T. Eisenbraun
Degang Cheng
Affiliation:
School of NanoSciences and NanoEngineering, The University at Albany-SUNY, Albany, New York 12203,U.S.A.
Eric T. Eisenbraun
Affiliation:
School of NanoSciences and NanoEngineering, The University at Albany-SUNY, Albany, New York 12203,U.S.A.
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Abstract

A plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E10.4
Copyright
Copyright © Materials Research Society 2003

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References

1. Jain, A., Adetutu, O., Ekstrom, B., Hamilton, G., Herrick, M., Venkatraman, R., and Weitzman, E., Pro. Advanced Interconnects and Contacts, MRS, pp. 269 (1999).Google Scholar
2. Wong, S. S., Ryu, C., Lee, H., and Kwon, K.W., Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits. Symposium, MRS, pp.75 (1998).Google Scholar
3. Ritala, M., Kalsi, P., Riihela, D., Kukli, K., Leskela, M., and Jokine, J., Chem. Mater. 11, 1712 (1999).Google Scholar
4. Eisenbraun, E., Straten, O., Zhu, Y., Dovidenko, K., and Kaloyeros, A., ITTC 2001.Google Scholar
5. Park, J.S., Park, H.S., and Kang, S.W., J. Electrochem. Soc. 149, C28 (2002).Google Scholar
6. Rossnagel, S.M., Sherman, A., and Turner, F., J. Vac. Sci. Technol. B18, 2016 (2000)Google Scholar
7. Suntola, T., Thin Solid Films 216, 84 (1992).Google Scholar
8. Moulder, J. F., Stickle, W. F., Sobol, P. E., and Bomben, K. D., Handbook of X-Ray Photoelectron Spectroscopy, Perkin-Elmer Corporation, pp.41 (1992)Google Scholar
9. Tsai, M. H. and Sun, S. C., Appl. Phy. Lett. 67, 1234 (1995).Google Scholar
10. Imahori, J., Oku, T., and Murakami, M., Thin Solid Films 301, 142 (1997).Google Scholar