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Integration Challenges of Inorganic Low-K (K≤2.5) Materials with CU for Sub-0.25μm Multilevel Interconnects

Published online by Cambridge University Press:  10 February 2011

K. C. Yu ,
J. Defilippi ,
R. Tiwari ,
T. Sparks ,
D. Smith ,
M. Olivares ,
S. Selinidis ,
J. Zhang ,
K. Junker  and
G. Braekelmann
...Show all authors
K. C. Yu
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
J. Defilippi
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
R. Tiwari
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
T. Sparks
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
D. Smith
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
M. Olivares
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
S. Selinidis
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
J. Zhang
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
K. Junker
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
G. Braekelmann
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
J. Farkas
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
K. S. Lee
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
S. Filipiak
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
M. Lindell
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
J. K. Watanabe
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
J. T. Wetzel
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
D. Jawarani
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
M. T. Herrick
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
N. G. Cave
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
C. C. Hobbs
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
J. J. Stankus
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
R. Mora
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
M. Freeman
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
T. Van Gompel
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
D. Denning
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
B. W. Fowler
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
S. Garcia
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
T. Newton
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
D. Pena
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
C. Keyes
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
T. Nguyen
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
S. Kirksey
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
T. Neil
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
J. Conner
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
J. J. Lee
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
R. Fox
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
R. Hershey
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
P. Crabtree
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
D. D. Sieloff
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
R. Blumenthal
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
E. J. Weitzman
Affiliation:
Motorola Semiconductor Products Sector, Austin TX, 78721
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Abstract

The recent introduction of dual inlaid Cu and oxide based interconnects within sub-0.25μm CMOS technology has delivered higher performance and lower power devices. Further speed improvements and power reduction may be achieved by reducing the interconnect parasitic capacitance through integration of low-k interlevel dielectric (ILD) materials with Cu. This paper demonstrates successful multi-level dual inlaid Cu/low-k interconnects with ILD permittivities ranging from 2.0 to 2.5. Integration challenges specific to inorganic low-k and Cu based structures are discussed. Through advanced CMP process development, multi-level integration of porous oxide materials with moduli less than 0.5 GPa is demonstrated. Parametric data and isothermal annealing of these Cu/ low-k structures show results with yield comparable to Cu/oxide based interconnects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 565: Symposium O – Low-Dielectric Constant Materials V , 1999 , 151
Copyright
Copyright © Materials Research Society 1999

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