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Integrated Titanium Silicide Processing

Published online by Cambridge University Press:  25 February 2011

Jaim Nulman
Jaim Nulman*
Affiliation:
Applied Materials Inc., 3050 Bowers Ave., Santa Clara, CA 95054
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Abstract

The processing of titanium silicide in a multichamber processing system is described. Three processes are included: wafer cleaning, Ti deposition, and annealing. The results are compared to wafers processed in a conventional way with exposure to ambient air between Ti deposition and the annealing step. TEM, RBS and sheet resistance measurements indicate that the films processed without exposure to ambient air have thicker and purer TiN layers as compared to the films with air exposure. Furthermore, integration allows for a wider processing window for the first annealing step. The use of reactive cleaning chemistry prior to Ti deposition results in a smooth silicon surface and therefore uniform silicidation as compared to inert cleaning technology, where redeposit of etched material occurs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 123
Copyright
Copyright © Materials Research Society 1990

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References

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