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Integrated Processing of Silicon Oxynitride Alloy Dielectrics by Plasma-Assisted Oxidation, Chemical Vapor Deposition, and On-Line Rapid Thermal Annealing

Published online by Cambridge University Press:  15 February 2011

S. V. Hattangady ,
H. Niimi ,
S. Gandhi  and
G. Lucovsky
S. V. Hattangady
Affiliation:
Departments of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC 27695-8202.
H. Niimi
Affiliation:
Departments of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC 27695-8202.
S. Gandhi
Affiliation:
Departments of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC 27695-8202.
G. Lucovsky
Affiliation:
Departments of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC 27695-8202.
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Abstract

Thin film dielectrics have been prepared in a cluster processing system with chambers for plasma-assisted, rapid-thermal processing, and on-line Auger electron spectroscopy (AES). A low-thermal budget process for the formation of homogeneous silicon oxynitride (OXN) alloy films is presented. This Na2-based plasma-CVD process has (i) increased process latitude for the formation of N-rich alloys, and (ii) results in lower bonded-H concentrations, in comparison with a similar NH3-based process. Gate dielectric formation consists of (i) a 300°C plasma-assisted oxidation for removal of residual hydrocarbons, and formation of an Si-SiO2 interface protected by ∼0.5-0.6 nm of oxide, (ii) a 300°C plasma-assisted CVD of oxynitride films from N2O, N2, and SiH4, and (iii) a 30 s, 900°C post-deposition rapid-thermal anneal in an ambient that contains sufficient oxygen to prevent decomposition of the Si/SiO2 interface. On-line AES and off-line infrared (IR) spectroscopy have been used to characterize chemical bonding, showing that the deposited films are pseudo-binary alloys lying on a join-line from SiO2 and Si3N4 in a ternary composition diagram. Electrical characterization of MOS capacitors, consisting of O-OXN-O structures, using C-V techniques is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 213
Copyright
Copyright © Materials Research Society 1995

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References

1. Moslehi, M.M., Chapman, R.A., Wong, M., Paranjpe, A., Najm, H.N., Kuehne, J., Yeakley, R.L., and Davis, C.J., IEEE Trans. Elec. Dev. 39, 4 (1992).Google Scholar
2. Lo, G.Q., Ting, W.C., Shih, D.K., and Kwong, D.L., Appl. Phys. Lett. 56, 979 (1990).Google Scholar
3. Xu, X-L, Kuehn, R.T., Wortman, J., Ozturk, M.C., Appl. Phys. Lett. 60, 3063 (1992).Google Scholar
4. Batey, J. and Tierney, E., J. Appl. Phys. 60, 3136 (1986).Google Scholar
5. Yasuda, T., Ma, Y., Habermehl, S., Lucovsky, G., Appl. Phys. Lett. 60, 434 (1992).Google Scholar
6. Okada, Y., Tobin, P., Rushbrook, P., DeHart, W., IEEE Trans Elec Dev 41, 191 (1994).Google Scholar
7. Carr, E. and Buhrman, R.A., Appl. Phys. Lett. 63, 54 (1993).Google Scholar
8. Cable, J., Mann, R.A., Woo, C.S., IEEE Elec. Dev. Lett. 12, 128 (1991).Google Scholar
9. Hattangady, S.V., Misra, V., Yasuda, T., Hornung, B., Xu, X-L, Lucovsky, G., and Wortman, J. J., Proc. 3rd Intl. Symp. Clean. Tech. Semicond. Mfg. 94–7, 288 (1993).Google Scholar
10. Rubloff, G.W., Offenberg, M., Liehr, M., IEEE Trans. Semicond. Mfg. 7, 96 (1994).Google Scholar
11. Hattangady, S.V., Ph.D. Thesis, North Carolina State University, Raleigh (1995).Google Scholar
12. Lanford, W.A. and Rand, M.J., J. Appl. Phys. 49, 2473 (1978).Google Scholar
13. Ma, Y. and Lucovsky, G., J. Vac. Sci. Technol. B12, 2504, (1994).Google Scholar