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Integrated Piezoelectric and Pyroelectric Devices from Thin Film Ferroelectrics

Published online by Cambridge University Press:  25 February 2011

M. Sayer ,
C.V.R. Vasant Kumar ,
D. Barrow ,
Li Zou  and
D.T. Amm
M. Sayer
Affiliation:
Department of Physics, Queen's University, Kingston, Ontario, Canada K7L 3N6
C.V.R. Vasant Kumar
Affiliation:
Department of Physics, Queen's University, Kingston, Ontario, Canada K7L 3N6
D. Barrow
Affiliation:
Department of Physics, Queen's University, Kingston, Ontario, Canada K7L 3N6
Li Zou
Affiliation:
Department of Physics, Queen's University, Kingston, Ontario, Canada K7L 3N6
D.T. Amm
Affiliation:
Department of Physics, Queen's University, Kingston, Ontario, Canada K7L 3N6
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Abstract

Thin PZT films 1-4 μm in thickness prepared by sputtering or sol gel methods allow PZT films to be integrated with silicon technology to achieve piezoelectric or pyroelectric structures having small size or mass. Design criteria, materials and processing techniques for such devices are discussed, and the implementation of small size devices on silicon substrates is demonstrated. Factors of importance are the piezoelectric and pyroelectric characteristics achievable in the films, mechanical strength and fatigue, and the stability and compatibility of the films and electrodes with device fabrication procedures and operating conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 39
Copyright
Copyright © Materials Research Society 1992

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