Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-27T02:33:46.766Z Has data issue: false hasContentIssue false

Instability of The Electron-Hole Plasma and its Possible Relation With Melting

Published online by Cambridge University Press:  15 February 2011

Monique Combescot
Affiliation:
Groupe de physique des solides de l'Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France
Julien Bok
Affiliation:
Groupe de physique des solides de l'Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France
Get access

Abstract

We show that the softening of the T.A. phonon mode produces an instability in the electron-hole plasma of a silicon-like semiconductor and suggest that this instability can be the mechanism for melting of this type of material. This allows us to estimate the characteristics of a laser pulse which are necessary to modify the usual melting, i.e. which would lead to a substantial decrease of the melting temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Van Vechten, J. A., J. Phys. (Paris) Colloquy 41, C415 (1980).Google Scholar
2.Heine, V., Van Vechten, J. A., Phys. Rev. B 13, 1622 (1976).Google Scholar
3.Combescot, M., J. Bok, Phys. Rev. Lett. 48, 1413 (1982).Google Scholar
4.Combescot, M., Phys. Lett. 85 A, 308 (1981).Google Scholar