Hostname: page-component-848d4c4894-v5vhk Total loading time: 0 Render date: 2024-07-07T20:36:00.587Z Has data issue: false hasContentIssue false
  • English
  • Français

Instability in a-Si:H Thin-Film Transistor: A New Method to Discriminate Between Charge Injection and Defect Creation

Published online by Cambridge University Press:  21 February 2011

P. Foglietti ,
G. Fortunato ,
L. Mariucci  and
V. Parisi
P. Foglietti
Affiliation:
CNR, Istituto di Elettronica dello Stato Solido, Via Cineto Romano 42, 00156 ROMA, ITALY
G. Fortunato
Affiliation:
CNR, Istituto di Elettronica dello Stato Solido, Via Cineto Romano 42, 00156 ROMA, ITALY
L. Mariucci
Affiliation:
CNR, Istituto di Elettronica dello Stato Solido, Via Cineto Romano 42, 00156 ROMA, ITALY
V. Parisi
Affiliation:
Universita' di Roma“Tor Vergata”, Dip. di Fisica, 00173 ROMA, ITALY
Get access

Abstract

In the present work, in order to discriminate the main source of instability in a-Si:H TFTs, the determination of both threshold voltage and flat-band voltage has been performed after bias-stressing the devices with different gate voltages and at different temperatures. Flat-band voltage was determined by the space-charge photomodulation technique. From the close correlation observed between the two quantities, we conclude that the predominant instability mechanism is represented by change in the gate insulator charge at and near the semiconductor/insulator interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1019
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Gelatos, A. V. and Kanicky, J., Appl. Phys. Lett. 57, 1197 (1990)Google Scholar
[2] Fortunato, G., Mariucci, L. and Reita, C., Appl. Phys. Lett. 59, 828 (1991)Google Scholar
[3] Mariucci, L., Fortunato, G., Puglia, C., Pecora, A. and Priori, S., Philos. Mag. Lett. 65, (1992).Google Scholar
[4] Powell, M. J., et al., Philos. Mag. B 63, 325 (1991).CrossRefGoogle Scholar
[5] Powell, M. J., van Berkel, C. and Deane, S. C., J. non-cryst. Solids 137&138, 1215 (1991).Google Scholar
[6] Jackson, W.B., Phys. Rev. B41, 1059 (1990).Google Scholar
[7] Fortunato, G. and Migliorato, P., J. of Appl. Phys. 68, 2463 (1990).Google Scholar
[8] Weber, K., Grunewald, M., Fuhs, W. and Thomas, P., Phys. Stat. Sol. (b) 110, 133 (1982).Google Scholar
[9] Weisfield, R. L. and Anderson, D. A., Philos. Mag. B44, 83 (1981).Google Scholar
[10] Fortunato, G., et al., IEEE Trans, on Electron Dev. 36, 2825 (1989).CrossRefGoogle Scholar
[11] Fortunato, G., Mariucci, L., Reita, C. and Parisi, V., J. non-cryst. Solids 114, 378 (1989).Google Scholar
[12] Simmons, J.G. and Taylor, G.W., Phys. Rev. B 4, 502 (1971)CrossRefGoogle Scholar