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In-Situ X-ray Photoemission Spectromicroscopy of Electromigration in Patterned Al-Cu Lines With Maximum

Published online by Cambridge University Press:  10 February 2011

H.H. Solak
Affiliation:
Dept. of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
G.F. Lorusso
Affiliation:
Dept. of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
S. Singh
Affiliation:
Dept. of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
F. Cerrina
Affiliation:
Dept. of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
J.H. Underwood
Affiliation:
Center for X-ray Optics, Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
P. Batson
Affiliation:
Center for X-ray Optics, Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
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Abstract

We report the application of a unique photoemission spectromicroscope (MAXIMUM) to the study of electromigration phenomena in Al-Cu interconnects. MAXIMUM is a scanning type photoemission microscope that uses multilayer-coated optics to focus 130 eV x-rays to a sub-0.1 µm spot. An electron energy analyzer collects photoelectrons in a chosen spectral region of interest to form an image of the sample that is sensitive to chemical states of elements on the sample surface. Al-Cu lines were characterized by spectromicroscopy techniques before and after electromigration stressing in the UHV environment of the microscope chamber. We present spectro-micrographs showing the chemical and structural changes on Al-Cu line surfaces as a result of the electromigration process.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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