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In-situ X-ray Measurements of the Initial Epitaxy of Fe(001) Films on MgO(001)

Published online by Cambridge University Press:  25 February 2011

Bruce M. Lairson ,
A. P. Payne ,
S. Brennan ,
N. M. Rensing ,
B. J. Daniels  and
B. M. Clemens
Bruce M. Lairson
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305.
A. P. Payne
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305.
S. Brennan
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305.
N. M. Rensing
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305.
B. J. Daniels
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305.
B. M. Clemens
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305.
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Abstract

We have studied die evolution of the lattice parameter of epitaxial Fe(001) on MgO(001) vs. thickness between 1 and 200 monolayers using Grazing Incidence X-ray Scattering. We show that an interaction exists between the islanded film and the substrate, which allows the film to be incommensurate, even when the islands are too small to allow full dislocations to exist. For the conditions studied, the Fe lattice parameter increases toward the MgO lattice parameter with increasing thickness in the 1–10 monolayer coverage regime, and then relaxes back toward the bulk Fe lattice parameter at greater thicknesses. We employ a model for the interaction between film islands and the substrate which explains large changes in the lattice parameter of the Fe in the 1–10 monolayer thickness range. Relaxation at larger thicknesses is described by continuum elasticity theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 441
Copyright
Copyright © Materials Research Society 1993

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References

Poppa, H. in Epitaxial Growth, Academic Press, New York, NY, (1975).Google Scholar
2. Schell-Sorokin, A. J. and Tromp, R. M., Phys. Rev. Lett., 64, 1039 (1990).Google Scholar
3. Payne, A. P., Clemens, B. M., and Brennan, S., Rev. Sci. Instrum., 63, 1147, (1992).Google Scholar
4. Etienne, P., Massies, J., Lequien, S., Cabanel, R., and Petroff, F., J. Cryst. Growth, 111, 1003 (1991).CrossRefGoogle Scholar
5. Lairson, B. M., Visokay, M., Sinclair, R., and Clemens, B. M., Appl. Phys. Lett. 61, 1390, (1992).Google Scholar
6. Koyano, T., Kita, E., Ohshima, K., and Tasaki, A., J. Phys. Cond. Mat., 3, 5921 (1991).Google Scholar
7. Yoshizaki, F., Tanaka, N., and Mihama, K., Z. Phys. D, 19, 259 (1991).Google Scholar
8. Matthews, J. W. in Epitaxial Growth, Academic Press, New York, NY, 1975.Google Scholar
9. Reiss, H.. J. Appl. Phys., 39, 5045 (1968).Google Scholar
10. Lairson, B. M., Payne, A. P., Brennan, S., Rensing, N. M., Daniels, B.J., and Clemens, B.M., unpublished.Google Scholar