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In-situ XPS Study of ALD Ta(N) Barrier Formation onOrganosilicate Dielectric Surface

Published online by Cambridge University Press:  17 March 2011

Junjun Liu ,
Junjing Bao ,
Michael Scharnberg  and
Paul S. Ho
Junjun Liu
Affiliation:
Laboratory for Interconnect and Packaging, Microelectronic Research Center, the University of Texas at Austin, Austin, TX 78712-1063, USA
Junjing Bao
Affiliation:
Laboratory for Interconnect and Packaging, Microelectronic Research Center, the University of Texas at Austin, Austin, TX 78712-1063, USA
Michael Scharnberg
Affiliation:
Lehrstuhl für Materuakverbunde, Technische Fakultät der Christian-Albrechts-Universität zu Kiel, Kaiserstr.2, D-24143 Kiel, Germany
Paul S. Ho
Affiliation:
Laboratory for Interconnect and Packaging, Microelectronic Research Center, the University of Texas at Austin, Austin, TX 78712-1063, USA
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Abstract

Beams of nitrogen and hydrogen radicals were investigated as surfacepre-treatment and process enhancement techniques for atomic layer deposition(ALD) of tantalum nitride barrier layer on a dense organosilicate (OSG) lowk film. In-situ x-ray photoelectron spectroscopy (XPS)studies of the evolution of the low k surface chemistry revealed an initialtransient growth region controlled mainly by the substrate surfacechemistry. Pre-treatment of the low k surface with radical beams,particularly with nitrogen radicals, was found to enhance significantly thechemisorption of the TaCl5 precursor on the OSG surfaces. Theenhancement was attributed to the dissociation of the weakly bonded methylgroups from the low k surface followed by nitridation with the nitrogenradicals. In the subsequent linear growth region, atomic hydrogen specieswas able to reduce the chlorine content under appropriate temperature andwith sufficient purge. The role of the atomic hydrogen in this processenhancement is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F2.6
Copyright
Copyright © Materials Research Society 2004

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