Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-29T07:39:43.183Z Has data issue: false hasContentIssue false
  • English
  • Français

In-Situ Thin Film Growth of PbTiO3 By Multi Target Sputtering

Published online by Cambridge University Press:  15 February 2011

Thomas Maeder  and
Paul Muralt
Thomas Maeder
Affiliation:
Laboratoire de Céramique, Swiss Federal Institute of Technology (EPFL), Lausanne, Switzerland.
Paul Muralt
Affiliation:
Laboratoire de Céramique, Swiss Federal Institute of Technology (EPFL), Lausanne, Switzerland.
Get access

Abstract

The in-situ reactive sputter deposition of PbTiO3 on Pt/Ti/SiO2/Si from two metallic targets was investigated. A minimal lead oxide flux of two to three times the titanium oxide flux is needed in order to obtain stoichiometric films with the perovskite structure. For higher fluxes, the Pb/Ti ratio in the film stays at the stoichiometric value 1; the orientation changes from random to <100>; and the film morphology transforms from a rough to a smooth polycrystalline film. The obtained dielectric constants vary between 40 and 150, the losses between 2 and 4 % (10 kHz). The method could be extended to PbZrxTi1-xO3 for x ≤0.7. The orientation is lost when the Pt electrodes are replaced by RuO2 electrodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 341: Symposium F – Epitaxial Oxide Thin Films and Heterostructures , 1994 , 361
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sreenivas, K. and Sayer, M., J.Appl. Phys. 64, 1484 (1988).CrossRefGoogle Scholar
2. lijima, K., Tomita, Y., Takayama, R., and Ueda, I., J. Appl. Phys. 60, 361 (1986).Google Scholar
3. Roy, R.A. and Etzold, K.F., J.Mater.Res., 7, 1455 (1992).Google Scholar
4. Bruchhaus, R., Huber, H., Pitzer, D., and Wersing, W., Ferroelectrics 127, 137 (1992).CrossRefGoogle Scholar
5. Maiwa, H., Ichinose, N., and Okazaki, K., Jpn. J. Appl. Phys., 31, 3029 (1992)Google Scholar
6. Hirata, K. et. al., Jpn. J. Appl. Phys., 31, 3021 (1992).Google Scholar
7. Kumar, C.V.R. Vasant, Pascual, R., and Sayer, M., J. Appl. Phys. 71, 864 (1992).Google Scholar
8. Sreenivas, K., Reaney, I., Maeder, T., and Setter, N., J. Appl. Phys. 75, 232 (1994).Google Scholar
9. Ueno, S. and Ishiwara, H., Jpn. J. Appl. Phys., 31, 2982 (1992).Google Scholar
10. Iijima, K., et.al., J. Appl. Phys., 72, 2840 (1992).CrossRefGoogle Scholar
11. Reichelt, K., Vacuum 38, 1083 (1988).Google Scholar
12. Venables, J.A. and Price, G.L., in Epitaxial growth part B, edited by J.W., Matthews (Academic Press, New York 1975) pp. 381–436.Google Scholar
13. Li, Z., Grimsditch, M., Xu, X. and Chan, S.-K., Ferroelectrics 141, 313 (1993).Google Scholar