Hostname: page-component-6bf8c574d5-xtvcr Total loading time: 0 Render date: 2025-02-20T14:51:43.548Z Has data issue: false hasContentIssue false
  • English
  • Français

In-Situ TEM Crystallization of Anorthite-Glass Films on α-Al2O3

Published online by Cambridge University Press:  15 February 2011

Michael P. Mallamaci ,
James Bentley  and
C. Barry Carter
Michael P. Mallamaci
Affiliation:
Department Of Chemical Engineering And Materials Science, University Of Minnesota, 421 Washington Ave. Se, Minneapolis, Mn 55455–0132
James Bentley
Affiliation:
Metals And Ceramics Division, Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, TN 37831–6376
C. Barry Carter
Affiliation:
Department Of Chemical Engineering And Materials Science, University Of Minnesota, 421 Washington Ave. Se, Minneapolis, Mn 55455–0132
Get access

Abstract

Anorthite-glass films have been grown by pulsed-laser deposition onsingle-crystal α-Al2O3 substrates which werepre-thinned to electron transparency. The glass films were crystallized inthe transmission electron Microscope (TEM), which allowed direct observationand video-recording of the crystallization process. Crystallization of thesefilms in the TEM resulted in the formation of hexagonal and orthorhombicanorthite. The orthorhombic phase was the predominant product of glass filmsgrown at elevated substrate temperatures and displayed strong epitaxy withthe underlying substrate. In contrast, the hexagonal phase was the majorconstituent of films grown at ambient substrate temperature and displayed noclear epitaxy with the substrate. The differences in degree of epitaxy andphase structure may be evidence of ordering at the original glass/oxideinterface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 567
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Clarke, D. R. and Gee, M. L., in Materials Interfaces: Atomic-level structure and properties. edited by Wolf, D. and Yip, S. (Chapman & Hall, London, 1992), p. 255–72.Google Scholar
2. Bonnell, D. A., Tien, T.-Y. and Ruhle, M., J. Am. Ceram. Soc. 70, 460–65 (1987).Google Scholar
3. Zdaniewski, W. A. and Kirchner, H. P., Adv. Ceram. Mat. 1, 99–103 (1986).Google Scholar
4. Susnitzky, D. W. and Carter, C. B., J. Am. Ceram. Soc. 69, C–217-C-220 (1986).Google Scholar
5. Mallamaci, M. P., Bentley, J. and Carter, C. B., in Laser Ablation in Materials Processing-Fundamentals and Applications, edited by Braren, B., Dubowski, J. and Norton, D. (Mat. Res. Soc. Proc. 285, Boston, MA, 1992) pp. 433–38.Google Scholar
6. Davis, G. L. and Tuttle, O. F., Amer. J. Sci. Bowen Volume, 107–14 (1952).Google Scholar
7. Borglum, B. P., Bukowski, J. M., Young, J. F. and Buchanan, R. C., J. Am. Ceram. Soc. 76, 1354–56 (1993).Google Scholar
8. Liu, C., Komarneni, S. and Roy, R., J. Am. Ceram. Soc. 75, 2665–70 (1992).Google Scholar
9. Mallamaci, M. P., Bentley, J. and Carter, C. B., in Proc. 51st Annual Meeting of the Microscopy Society of America, edited by Bailey, G. W. and Rieder, C. L. (San Francisco Press, Inc., San Francisco, CA, 1993), p. 928–9.Google Scholar
10. Ndubuisi, G. C., Liu, J. and Cowley, J. M., Micros. Res. and Techn. 21, 10–22 (1992).Google Scholar
11. Cinibulk, M. K., Thomas, G. and Johnson, S. M., J. Am. Ceram. Soc. 75, 2037–43 (1992).Google Scholar
12. Kleebe, H.-J., Cinibulk, M. K., Cannon, R. M. and Ruhle, M., J. Am. Ceram. Soc. 76, 1969–77 (1993).Google Scholar
13. Simpson, Y. K. and Carter, C. B., J. Am. Ceram. Soc. 73, 2391–98 (1990).Google Scholar
14. Kaysser, W. A., Sprissler, M., Handwerker, C. A. and Blendell, J. E., J. Am. Ceram. Soc. 70, 339–43 (1987).Google Scholar