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In-Situ SubStrate Temperature Measurement During a-Sin Plasma CVD from N2 Rotational Temperature

Published online by Cambridge University Press:  21 February 2011

Shin-Ichiro Ishihara ,
Akira Otsuka  and
Seiichi Nagata
Shin-Ichiro Ishihara
Affiliation:
Display Technology Research Laboratory Matsushita Electric Industrial Co. Ltd., 3-15 Yakumonaka-machi Moriguchi Osaka 570 JAPAN
Akira Otsuka
Affiliation:
Display Technology Research Laboratory Matsushita Electric Industrial Co. Ltd., 3-15 Yakumonaka-machi Moriguchi Osaka 570 JAPAN
Seiichi Nagata
Affiliation:
Display Technology Research Laboratory Matsushita Electric Industrial Co. Ltd., 3-15 Yakumonaka-machi Moriguchi Osaka 570 JAPAN
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Abstract

Rotational temperature (Tr) of nitrogen molecule, equivalent to the gas temperature (Tg), was used for monitoring silicon nitride (SiN) surface temperature during rf glow discharge processing. SiN film characteristics such as deposition rate and etching rate for mixture of hydro-fluoric acid (HF) and ammonium fluoride : (NH4F) were dependent on Tr near the substrate. The Tr increased not only with substrate temperature setting (To) but also with gas mixing ratio of H2/(H2+N2) due to improvement of thermal conductance from heater to substrate in the process chamber.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 61
Copyright
Copyright © Materials Research Society 1990

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References

[1] Ishihara, S., Otsuka, A., & Nagata, S., to be published in Appl. Phys. Lett.Google Scholar
[2] Kistemacher, P.G., Tom, A., & DeVries, A.E., Phsica vol.48, 414 (1970)Google Scholar
[3] Brout, R., J. Chem. Phys., vol.22, 1189(1954)Google Scholar
[4] Phillips, D.M., J. Phys. D, vol.9, 507(1976)Google Scholar
[5] Wuerker, R.F., Dchmitz, L., Fukuchi, T., & Straus, P., Chem. Phys. Lett. vol.150, 443(1988)Google Scholar
[6] Harshbarger, W.R., Solid State Tech., vol.25, No.4, 126(1982)Google Scholar