The evolution of the biaxial modulus of amorphous alumina thin films has been studied insitu during electron-beam evaporation at 400°C on Si and sapphire substrates. A constant value of 197 ± 30 GPa was measured up to a thickness of 1.17 μm when depositing at 3 Å/s. This value was identical to that of films thinner than 0.30 μm deposited at an average rate of 6 Å/s. Above 0.30 μm, the modulus in these films decreased continuously to a value of 50 ± 8 GPa at a final thickness of 2.05 μm. Based on their refractive indices, the films deposited at 6 Å/s are 30% less dense than those deposited at 3 Å/s. This density deficit is insufficient to account for the modulus decrease; the remainder is probably the result of slit-like microcracks.