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In-Situ Studies of Silicon Oxidation

Published online by Cambridge University Press:  21 February 2011

J.M. Gibson  and
M. Y. Lanzerotti
J.M. Gibson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
M. Y. Lanzerotti
Affiliation:
Dunster House, Harvard University, Cambridge, MA 02138
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Abstract

Using a UHV transmission electron microscope we have examined the initial stages of Si oxidation. Using the surface-sensitive forbidden 1/3<422> reflection on Si (111) we have imaged surface steps at various stages of oxidation, including buried Si/SiO2 interface formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 67
Copyright
Copyright © Materials Research Society 1989

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References

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