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In-Situ Rheed-Traxs Monitoring Alloy Composition of the Surface During RF-MBE Growth of GaInN and AIGaN

Published online by Cambridge University Press:  10 February 2011

A. Ito
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468Japan, [email protected]
H. Sakai
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468Japan, [email protected]
M. Inagaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468Japan, [email protected]
G. Nomura
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468Japan, [email protected]
Y Nakamura
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468Japan, [email protected]
T. Yasuda
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468Japan, [email protected]
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468Japan, [email protected]
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468Japan, [email protected]
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Abstract

In-situ reflection high energy electron diffraction total reflection angle X-ray spectroscopy (RHEED-TRAXS) was performed to monitor alloy composition at the surface during growth of nitrides by RF-MBE for the first time. TRAXS signal of the GaLα line is found to be more sensitive to the composition at the surface than the GaKαline. A difference in the composition of layer adsorbed on the surface and the solid alloy layer has been identified.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

1. Singh, R., Moustakas, T.D., in Gallium Nitride and Related Materials edited by Ponce, F.A., Dupuis, R.D., Nakamura, S. and Edmond, J.A. (Mater. Res. Soc. Proc. 395, 1995), pp.163168.Google Scholar
2. Van Hove, J.M., Chow, P.P., Klaassen, J.J., Hickman, R. II, Wowchak, A.M., Croswell, D.R. and Polley, C., in Gallium Nitride and Related Materials II edited by Abernathy, C.R., Amano, H. and Zolper, J.C. (Mater. Res. Soc. Proc. 468, 1997), pp. 5156.10.1557/PROC-468-51Google Scholar
3. Taniyasu, Y., Ito, R., Shimoyama, N., Kurihara, M., Jia, A., Koto, Y., Kobayashi, M., Yoshikawa, A. and Takahashi, K., in Proceedings of The Second International Conference on Nitride Semiconductors, (ICNS'97. Proc. 1997), pp.320321.Google Scholar
4. Hasegawa, S., Ino, S., Yamamoto, Y. and Daimon, H., Jan. J.Appl. Phys. 24(1985), L387.10.1143/JJAP.24.L387Google Scholar
5. Hasegawa, S., Daimon, H. and Ino, S., Surf. Sci. 186(1987), 138.10.1016/S0039-6028(87)80039-0Google Scholar