Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-20T00:34:41.065Z Has data issue: false hasContentIssue false

In-Situ Real-Time Ellipsometry Study of Dynamic Processes of YBa2Cu3O7−x Thin Films

Published online by Cambridge University Press:  10 February 2011

Y. Gao
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, NC27599
A.H. Mueller
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, NC27599
E.A. Irene
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, NC27599
O. Auciello
Affiliation:
Materials Science and Chemistry Divisions, Argonne National Laboratory, Argonne, IL60439
A.R. Krauss
Affiliation:
Materials Science and Chemistry Divisions, Argonne National Laboratory, Argonne, IL60439
J.A. Schultz
Affiliation:
Ionwerks, Houston, TX77005
Get access

Abstract

The optical absorption peak at 4. leV associated with oxygen deficiency in YBa2Cu3O7−x thin films was monitored by spectroscopic ellipsometry (SE) in real time during the growth process. Two regimes dominated by oxygen out- and in-diffusion have been observed during deposition by ion beam sputtering at 700°C.The effect of oxygen partial pressure during the post-deposition cooling process on the oxidation of deposited films has also been investigated. The thermodynamic stability of the grown films was examined by real time SE during post annealing process. In-situ SE measurements have been performed to obtain the dielectric function of oxygen deficient YBa2Cu3O6 films in the temperature range from 27°C to 700°C. It has been demonstrated that real time SE is a sensitive and useful technique for in-situ diagnostics of the dynamics of YBa2Cu3O7−x thin film processes.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Leskela, M., Truman, J.K., Mueller, C.H. and Holloway, P.H., J. Vac. Sci. Technol. A 7, 3147(1989)10.1116/1.576329Google Scholar
2 Sobolewski, M.A., Semmancik, S., J. Vac. Sci. Technol. A 9, 2716(1991).10.1116/1.577231Google Scholar
3 Veen, G.N.A. Van, Bailer, T.S., Veries, J.W.C. De, Stollman, G.M., Physica C 152, 267(1988).10.1016/0921-4534(88)90139-6Google Scholar
4 Kumar, D., Apte, P.R., Pinto, R., Sharon, M., Gupta, L.C., J. Electrochem. Soc. 141, 1611(1994).10.1149/1.2054970Google Scholar
5 Aspnes, D.E. and Kelly, M.K., IEEE Journal of Quantum Electronics 25, 2378(1989).10.1109/3.42069Google Scholar
6 Jorgensen, J.D., Beno, M.A., Hinks, D.G., Soderhoim, L., Volin, K.J., Segre, C.U., Zhang, K. and Kleefisch, M.S., Phys. Rev. B 36, 3608(1987).10.1103/PhysRevB.36.3608Google Scholar
7 Michaelis, A., Irene, E.A., Auciello, O. and Krauss, A.R., J. Appl. Phys. 83, 7736(1998).10.1063/1.367947Google Scholar
8 Mueller, A.H., Gao, Y. and Irene, E.A. et al. , to be published in MRS Symp. Proc., Spring 1999.Google Scholar
9 Hammond, R.H. and Bormann, R., Physica C 162–164,703 (1989).10.1016/0921-4534(89)91218-5Google Scholar
10 Kelly, M.K, Barboux, P., Tarascon, J.-M., Aspnes, D.E., Bonner, W.A. and Morris, P.A., Phys. Rev. B 38, 870 (1988).10.1103/PhysRevB.38.870Google Scholar
11 Wooten, F., Optical Properties of Solids, Academic Press, New York, 42–84(1972).Google Scholar
12 Vina, L., Logothetidis, S. and Cardona, M., Phys. Rev. B 30, 1979(1984).10.1103/PhysRevB.30.1979Google Scholar