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In-situ Real Time Spectroscopic Ellipsometry Applied to the Surface Monitoring of Semiconductors

Published online by Cambridge University Press:  15 February 2011

P. Boher  and
J. L. Stehle
P. Boher
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 Bois-Colombes (France)
J. L. Stehle
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 Bois-Colombes (France)
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Abstract

A new kind of Real Time Spectroscopie Ellipsometer (RTSE) system is presented in detail. A multichannel analyser with photointensifier allows one to get spectroscopie measurements over the 0.25–0.85μm wavelength range with resolution λ/Δλ better than 500 and a good signal to noise ratio even for samples with poor reflectance. Precision and reproducibility of the system are around 0.3 and 0.1% for the two ellipsometric parameters. The measurement speed can be increased up to 15 spectra/s but must be adapted accurately to the process under control. An example of the heating process of a GaAs substrate measured in-situ by RTSE is presented and the temperature and native oxide thickness are deduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 1025
Copyright
Copyright © Materials Research Society 1997

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References

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