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In-Situ Pretreatment Approach for Surface Deterioration Alleviation Amidst Thermal Desorption of GaAs(100)

Published online by Cambridge University Press:  01 February 2011

A.F. Pun ,
X. Wang ,
J.B. Meeks ,
S.M Durbin  and
J.P. Zheng
A.F. Pun
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
X. Wang
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
J.B. Meeks
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
S.M Durbin
Affiliation:
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch, New Zealand
J.P. Zheng
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
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Abstract

Within this study, a novel in-situ pretreatment is proposed theoretically and demonstrated experimentally, in which the formation of surface pits is subsequently stifled during thermal desorption. The proposed method involves fueling the well reviewed chemical oxide reduction reaction with a segregated source of material other than that ordinarily utilized in pit formation. The proposed method is implementable in virtually all deposition systems subject to the constraints of providing material deposition, substrate heating, and the creation of non-oxidizing environments either via vacuum or inert atmo sphere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 872: Symposium J – Micro- and Nanosystems—Materials and Devices , 2005 , J14.4
Copyright
Copyright © Materials Research Society 2005

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