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In-Situ Photoluminescence Investigation of the Initial Porous Silicon Formation in 0.2M NH4F (pH 3.2)

Published online by Cambridge University Press:  15 February 2011

T. Dittrich ,
V. Y. Timoshenko  and
J. Rappich
T. Dittrich
Affiliation:
Technische Universität München, Physik Department E16, D-85747 Garching, Germany
V. Y. Timoshenko
Affiliation:
Physics Department, Moscow State University, 119899 Moscow, Russia
J. Rappich
Affiliation:
Hahn-Meitner-Institut, Abt. Photovoltaik, Rudower Chaussee 5, D-12489 Berlin, Germany
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Abstract

The porous silicon (por-Si) formation in 0.2M NH4F (pH 3.2) is investigated in-situ by photoluminescence (PL). The p-type Si(100) samples are treated electrochemically in the galvanostatic regime starting from Ihe hydrogenated surface. Single pulses of a N2 laser are used to probe stroboscopically the radiative band-band recombination of the bulk c-Si and the PL of por-Si. The PL intensity of c-Si is correlated with the current density during the current-voltage scan and indicates changes of surface recombination by the onset of chemical reactions. The PL intensity of c-Si increases rapidly after switching off the anodic current while the PL intensity of por-Si is not influenced by the rapid current switch. This shows that the passivation of the surfaces of the Si nanostructures is not affected by the por-Si formation at the surface of the bulk c-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 505
Copyright
Copyright © Materials Research Society 1997

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References

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