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In-situ observation of atomic processes in Xe nanocrystals embedded in al

Published online by Cambridge University Press:  10 February 2011

K. Mitsuishi ,
M. Song ,
K. Furuya ,
R. C. Birtcher ,
C. W. Allen  and
S. E. Donnelly
K. Furuya
Affiliation:
National Research Institute for Metals, Sakura, Tsukuba 305, Japan
C. W. Allen
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL60439, USA
S. E. Donnelly
Affiliation:
Department of Physics, University of Salford, Manchester, UK
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Abstract

Self-organization processes in Xe nanocrystals embedded in Al are observed with in-situ high-resolution electron microscopy. Under electron irradiation, stacking fault type defects are produced in Xe nanocrystals. The defects recover in a layer by layer manner. Detailed analysis of the video reveals that the displacement of Xe atoms in the stacking fault was rather small for the Xe atoms at boundary between Xe and Al, suggesting the possibility of the stacking fault in Xe precipitate originating inside of precipitate, not at the Al/Xe interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 504: Symposium KK – Atomistic Mechanisms in Beam Synthesis & Irradiation… , 1997 , 417
Copyright
Copyright © Materials Research Society 1998

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References

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