Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-29T07:00:27.113Z Has data issue: false hasContentIssue false
  • English
  • Français

In-situ Multilayer Film Growth Characterization by Brewster Angle Reflectance Differential Spectroscopy

Published online by Cambridge University Press:  22 February 2011

N. Dietz ,
D.J. Stephens ,
G. Lucovsky  and
K.J. Bachmann
N. Dietz
Affiliation:
North Carolina State University, Raleigh, NC 27695
D.J. Stephens
Affiliation:
North Carolina State University, Raleigh, NC 27695
G. Lucovsky
Affiliation:
North Carolina State University, Raleigh, NC 27695
K.J. Bachmann
Affiliation:
North Carolina State University, Raleigh, NC 27695
Get access

Abstract

Brewster Angle Reflectance Differential Spectroscopy (BARDS) has been proposed as an optical method for real-time characterization of the growth of thin films. BARDS is based on changes in the reflectivity, Rp, of parallel (p)-polarized light incident at, or near, the Brewster angle of the substrate material. Changes in R are sufficiently large to monitor layer growth, and to determine the thickness and the optical constants of the deposited film. In this paper we extend the method to multilayer film deposition. The derivative properties of R are correlated with differences in the optical constants of the two materials, and with the sharpness of their interface. We present spectra for SiO2/Si3N4/SiO2/Si, demonstrating some of these aspects of this new and effective approach to in-situ monitoring.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 27
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Aspnes, D.E., Quinn, W.E., Tamargo, M.C., Pudensi, M.A.A., Schwarz, S.A., Brasil, M.J.S.P., Nahory, R.E., and Gregory, S., Appl. Phys. Lett. 60(10), 1244–6 (1992).CrossRefGoogle Scholar
2 Aspnes, D.E., Harbison, J.P., Studna, A.A., and Florez, L.T. ; Appl. Phys. Lett. 52(12), 957–9 (1988).Google Scholar
3 Kobayashi, N., Makimoto, T., Yamauchi, Y., and Horikoshi, Y., J. Cryst. Growth 107(1-4), 62–7 (1991).Google Scholar
4 Armstrong, J.V., Farrell, T., Joyce, T.B., Kightley, P., Bullough, T.J., and Goodhew, P.J., J. Crystal Growth 120, 84–87 (1992).Google Scholar
5 Dietz, N. and Lewerenz, H.J., Appl. Surf. Sci. 69, 350–354 (1993).Google Scholar
6 Lewerenz, H.J., Dietz, N., J. Appl. Phys. 73 (10), 4975–87 (1993).Google Scholar
7 Parker, C.G., Silvestre, C., Watkins, M., Kuehn, R.T. and Hauser, J.R., Proceedings of UGIM Symposium, May 1993.Google Scholar