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In-Situ Monitoring of the Initial Growth of a-C:H Films by AES

Published online by Cambridge University Press:  22 February 2011

K.G. Tschersich
K.G. Tschersich*
Affiliation:
Institut fur Grenzflächenforschung und Vakuumphysik, KFA Jülich, D-5170 Jülich, Fed. Rep., Germany, (Association EURATOM/KFA)
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Abstract

Amorphous hydrogenated carbon films are deposited by direct ion beam deposition onto Si and W substrates at room temperature. Simultaneously, the sample surface composition is measured by Auger electron spectroscopy. The results indicate a sharp interface between film and Si and the formation of a W2C layer between film and W. The in-situ measurements are compared with sputter depth profiles. It is found that the former ones give insight into film growth processes, that is unattainable by sputter profiling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 153: Symposium J – Interfaces Between Polymers, Metals, and Ceramics , 1989 , 115
Copyright
Copyright © Materials Research Society 1989

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References

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