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In-Situ Monitoring of Electrical Parameters for Dry Etching

Published online by Cambridge University Press:  25 February 2011

J. Ignacio Ulacia F  and
James P. McVittie
J. Ignacio Ulacia F
Affiliation:
Integrated Circuits Laboratory Stanford University, Stanford, CA 94305
James P. McVittie
Affiliation:
Integrated Circuits Laboratory Stanford University, Stanford, CA 94305
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Abstract

In this paper, external electrical measurements and a circuit model are used to obtain indirectly the plasma potential, electron density, ion current density, and sheath thickness. In a revised and extended circuit model, each element describes a current-transport mechanism. Each mechanism is described by an analytical expression in terms of previously specified plasma parameters. The model is applicable in capacitive discharges with equal-area electrodes, and it can be expanded to consider other systems. To verify its applicability, electrical measurements of voltage, current and phase angle in an SF6 : O2 discharge are used to calculate the plasma impedance. Electrical plasma measurements yield time-averaged values for the impedance; the values obtained for each device reflect this dependency. After the calculation of each electrical device, SPICE 3.7a simulations separated the individual contribution of current transport by each mechanisms and validated the assumptions. The plasma parameters obtained by this technique agree well with a Langmuir-probe measurement, solutions of the Boltzmann transport equation, and data published in the literature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 98: Symposium K – Plasma Processing and Synthesis of Materials II , 1987 , 203
Copyright
Copyright © Materials Research Society 1987

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References

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