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In-situ Microscopic Study of Cu Intragranular Electromigration
Published online by Cambridge University Press: 26 February 2011
Abstract
Electromigration (EM) in unpassivated copper lines at room temperature has been investigated in ultra-high vacuum by in-situ transmission electron microscopy (TEM). The electric current induced atomic migration in a (211)-oriented Cu grain has been successfully recorded in real-time video. The atomic image of the (211) grain was found to vanish directionally when applying an electric current density of 2 × 106 A/cm2 through the Cu line. The results suggested that the combination of {111} planes and <110> directions to be the easiest EM path in crystalline copper. By performing selective area diffraction (SAD) analysis on a single Cu grain with (111) crystal orientation, some unusual electron diffraction patterns appeared after passing an electric current through the Cu line. It is believed that the EM-induced Cu twinning may be held responsible for the unique diffraction patterns
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- Copyright © Materials Research Society 2006