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In-Situ High Resolution Transmission Electron Microscopy of Dynamic Events During the Amorphous to Crystalline Phase Transformation in Silicon

Published online by Cambridge University Press:  25 February 2011

M. A. Parker ,
T. W. Sigmon  and
R. Sinclair
M. A. Parker
Affiliation:
Materials Science Dept., Stanford University, Stanford, CA 94305 Materials and Process Engineering Dept., IBM, Rochester, MN 55901
T. W. Sigmon
Affiliation:
Electrical Engineering Department, Stanford University, Stanford, CA 94305
R. Sinclair
Affiliation:
Materials Science Dept., Stanford University, Stanford, CA 94305
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Abstract

A technique has been developed which employs high resolution transmission electron microscopy (HRTEM) for the observation of the atomic mechanisms associated with solid state phase transformation as they occur at elevated temperatures. It consists of the annealing in-situ of cross-section transmission electron microscopy (TEM) specimens that have been favorably oriented for lattice fringe imaging and the video-recording of dynamic events as they occur in real-time. By means of this technique, we report the first video-recorded lattice images of crystallographic defect motion in silicon, viz. the motion of dislocations and stacking faults, as well as the first such images of the atomic mechanisms responsible for the amorphous to crystalline (a-c) phase transformation, viz. heterogeneous nucleation of crystal nuclei, coalescence of crystal nuclei by co-operative atomic processes, ledge motion at the growth interface, and normal growth in silicon. This technique holds great potential for the elucidation of the atomic mechanisms involved in reaction kinetics in the solid state.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 62: Symposium Q – Materials Problem Solving with the Transmission Electron Microscope , 1985 , 311
Copyright
Copyright © Materials Research Society 1986

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