Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-05T15:44:01.109Z Has data issue: false hasContentIssue false
  • English
  • Français

In-Situ Ftir and Mass Spectrometric Studies of Gallium Arsenide Metalorganic Chemical Vapor Deposition: Trimethyl Gallium and Tertiary-Butyl Arsine on GaAs(100)

Published online by Cambridge University Press:  25 February 2011

Ananth V. Annapragada  and
Klavs F. Jensen
Ananth V. Annapragada
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology Cambridge MA 02139
Klavs F. Jensen
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology Cambridge MA 02139
Get access

Abstract

Low pressure (∼10−5 Torr) studies of the adsorption and decomposition of tertiarybutyl arsine (t-BAs) on three different GaAs(100) surfaces (Ga-rich, H-atom treated and high temperature t-BAs treated) are presented. Mass spectrometric studies indicate that the primary gas-phase products of t-BAs decomposition on GaAs(100) are the tertiary-butyl radical and incomplete arsenic hydrides (predominantly AsH2). Infrared spectroscopic studies show that on H-atom treated and high-temperature t-BAs treated surfaces, t-BAs decomposes leaving behind very small quantities of alkyl groups. On Ga-rich surfaces however, significant amounts of alkyl products are observed. The surface species resulting from the adsorption of trimethyl gallium (TMG) are shown to be different at room temperature and high temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 53
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

(1) Memmert, U. and Yu, M., Appl. Phys. Lett. 56 1883 (1990)Google Scholar
(2) Donnelly, V.M. and MacCaulley, J.A., Surf Sci. in press (1990)Google Scholar
(3) Creighton, J.R., Lykke, K.R., Shamamian, V.A. and Kay, B.D., Appl. Phys. Lett 57 279 (1990).Google Scholar
(4) Haacke, G., Watkins, S.P., Burkhard, H., Appl. Phys. Lett. 56 478 (1990)Google Scholar
(5) Chabal, Y.J., Surf. Sci. Rep. 8, (1988) 211 Google Scholar
(6) Sadwick, L.P., Wang, K.L., Joseph, D.L. and Hicks, R.F., J. Vac. Sci. Tech., B7(2) 273 (1989)Google Scholar
(7) Tripathi, A., Mazzarese, D., Conner, W.C., Jones, K.A., J. Electronic. Materials, 18(1) 45 (1989)Google Scholar
(8) Harrick, N.J., Internal Reflection Spectroscopy, InterScience. Publishers 1967 Google Scholar
(9) Marking, R.H., Gladfelter, W.L. and Jensen, K.F., Chem. Mater. 2 499 (1990)Google Scholar
(10) Lee, P.W., Omstead, T.R., McKenna, D.R. and Jensen, K.F., J. Crystal Growth 93 134 (1988)Google Scholar
(11) Stringfellow, G.B., Prog. Crystal Growth and Charact. 19 115 (1989)Google Scholar
(12) Miller, S.R. and Milne, G.W.A., EPA/NIH Mass Spectral Data Base, NSRDS-NBS 63. Nat. Stand. Ref. Data Ser., Nat. Bur. Stand. (U.S.) 63 (1978).Google Scholar
(13) Yu, M., Memmert, U., Buchan, N.I., Kuech, T.F., paper E1.6, in these Proceedings.Google Scholar