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In-Situ Fourier Transform Infrared Spectroscopy for Real-Time Diagnostics of Thin Film Processes

Published online by Cambridge University Press:  10 February 2011

P. R. Solomon
Affiliation:
On-Line Technologies, Inc., 87 Church St, East Hartford, CT 06108
S. Charpenay
Affiliation:
On-Line Technologies, Inc., 87 Church St, East Hartford, CT 06108
W. Zhang
Affiliation:
On-Line Technologies, Inc., 87 Church St, East Hartford, CT 06108
A. S. Bonanno
Affiliation:
On-Line Technologies, Inc., 87 Church St, East Hartford, CT 06108
P. A. Rosenthal
Affiliation:
On-Line Technologies, Inc., 87 Church St, East Hartford, CT 06108
J. E. Cosgrove
Affiliation:
Advanced Fuel Research, Inc., 87 Church St, East Hartford, CT 06108
K. K Kinsella
Affiliation:
Advanced Fuel Research, Inc., 87 Church St, East Hartford, CT 06108
P. J. Kung
Affiliation:
Advanced Fuel Research, Inc., 87 Church St, East Hartford, CT 06108
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Abstract

Infrared spectroscopy is a versatile tool that is well adapted to in-situ diagnostics of many thin film properties and processes. In this paper, we will describe the application of infrared instrumentation for real-time in-situ measurements of film temperature, emissivity, thickness, free carriers, and optical constants using model based spectral analysis. We will illustrate the use of Fourier transform infrared (FT-IR) emission and reflection spectroscopy to monitor the fabrication of stacks of ferroelectric and conductive oxides on silicon substrates during pulsed laser deposition. The ability to measure the infrared optical constants of dielectrics such as silicon dioxide, including the detailed spectral dependence of the vibrational absorption bands at high temperatures, will be presented. The suitability of the technique for real-time sensing during rapid thermal processing will be illustrated using the example of carrier activation during a shallow-junction rapid thermal anneal.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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