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In-Situ Fabrication and Process Control Techniques in Rapid Thermal Processing†

Published online by Cambridge University Press:  28 February 2011

Mehrdad M. Moslehi ,
John Kuehne ,
Richard Yeakley ,
Lino Velo ,
Habib Najm ,
Bill Dostalik ,
David Yin  and
Cecil J. Davis
Mehrdad M. Moslehi
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
John Kuehne
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
Richard Yeakley
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
Lino Velo
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
Habib Najm
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
Bill Dostalik
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
David Yin
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
Cecil J. Davis
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
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Abstract

Advanced rapid thermal processing (RTP) equipment and sensors have been developed for in-situ fabrication of semiconductor devices. High-performance multi-zone lamp modules have been applied to various processes including rapid thermal oxidation (RTO), chemicalvapor deposition (CVD) of tungsten and amorphous/polycrystalline silicon, silicide formation, as well as high-temperature rapid thermal annealing (RTA). Concurrent use of multizone lamps and multi-point temperature sensors allows real-time wafer temperature control and process uniformity optimization. Specific experimental results will be presented on the multi-zone lamp modules, in-situ process control sensors, and single-wafer fabrication processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 143
Copyright
Copyright © Materials Research Society 1991

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Footnotes

†

Invited Paper

References

[1] Rapid Thermal and Related Processing Techniques, Singh, R. and Moslehi, M. M., Editors, Proc. SPIE 1393, (1991).CrossRefGoogle Scholar
[2] Moslehi, M. M., IEEE Trans. on Semiconductor Mfg., 2, 130 (1989).Google Scholar
[3] Gyurcsik, R. S., Riley, T. J., and Sorrell, F. Y., IEEE Trans. on Semiconductor Mfg., 4 (1), 9 (1991).Google Scholar
[4] Campbell, S., Knutson, K., Ahn, K., Leighton, J., and Liu, B., IEDM Tech. Dig., 921 (1990).Google Scholar
[5] Sorrel, F., SRC workshop on temperature meas., Santa Fe, New Mexico, Feb. (1990).Google Scholar
[6] Nulman, J., Cohen, B., Blonigan, W., Antonio, S., Meinecke, R., and Gat, A., MRS Symp. Proc., 146, 461 (1989).CrossRefGoogle Scholar
[7] Sato, T., Jpn. J. Appl. Phys., 6, 339 (1967).Google Scholar
[8] Gelpey, J. and Liao, J., SRC workshop on temperature meas., Santa Fe, New Mexico, Feb. (1990).Google Scholar
[9] Moslehi, M., Chapman, R., Wong, M., Paranjpe, A., Najm, H., Kuehne, J., Yeakley, R., and Davis, C., IEEE Trans. on Electron Devices (submitted for publication), (Dec. 1991).Google Scholar
[10] Kamins, T., Bradbury, D., Cass, T., Laderman, S., and Reid, G., J. Electrochem. Soc., 131, 2555 (1986).Google Scholar
[11] Moslehi, M. M., Shatas, S. C., Saraswat, K. C., and Meindl, J. D., IEEE Trans. on Electron Devices, ED-34 (6), 1407 (1987).Google Scholar