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In-Situ Etch to Improve Chemical Beam Epitaxy Regrown AlgaAs/GaAs Interfaces for HBT Applications

Published online by Cambridge University Press:  03 September 2012

Y.M. Hsin ,
N. Y. Li ,
C. W. Tu  and
P. M. Asbeck
Y.M. Hsin
Affiliation:
Department of Electrical and Computer Engineering University of California, San Diego, CA 92093-0407
N. Y. Li
Affiliation:
Department of Electrical and Computer Engineering University of California, San Diego, CA 92093-0407
C. W. Tu
Affiliation:
Department of Electrical and Computer Engineering University of California, San Diego, CA 92093-0407
P. M. Asbeck
Affiliation:
Department of Electrical and Computer Engineering University of California, San Diego, CA 92093-0407
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Abstract

We have studied the etching effect of AlxGa1-xAs (0≤ x ≤ 0.5) by trisdimethylaminoarsenic (TDMAAs) at different substrate temperatures, and the quality of the resulting etched/regrown GaAs interface. We find that the etching rate of AlxGa1-x As decreases with increasing Al composition, and the interface trap density of the TDMAAs etched/regrown interface can be reduced by about a factor of 10 as deduced from capacitance-voltage carrier profiles. A smooth surface morphology of GaAs with an interface state density of 1.4×l011 cm−2 can be obtained at a lower in-situ etching temperature of 550°C. Moreover, by using this in-situ etching the I-V characteristics of regrown p-n junctions of Al0.35Ga0.65As/Al0.25Ga0.75As and Al0.35Ga0.65As/GaAs can be improved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 87
Copyright
Copyright © Materials Research Society 1997

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