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In-situ Ellipsometry Study of Ion Bombardment Effects on Low Temperature Si Epitaxy by dc Magnetron Sputtering

Published online by Cambridge University Press:  21 February 2011

Y.H. Yang ,
G.F. Feng ,
M. Katiyar  and
J.R. Abelson
Y.H. Yang
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
G.F. Feng
Affiliation:
Applied Display Technology, Applied Display Technology, Inc., 3050 Bowers Ave., Santa Clara, CA 95054
M. Katiyar
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
J.R. Abelson
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

We deposit Si films on Si(100) substrates at temperatures of 300 - 350 °C using dc magnetron sputtering, and characterize the structure by in-situ spectroscopic ellipsometry. Changes in the ion or electron bombardment, produced by biasing the sample with respect to the floating potential, are found to exert a strong effect on the kinetics of the crystalline (epitaxial) to amorphous transition for films deposited just below the apparent minimum temperature (350 °C) for sustained epitaxy. At 320°C, the best results are found at the floating potential, which is 25 V below the plasma potential and produces an ion flux equal to the depositing Si flux on the substrate. At +14 V above the floating potential, the volume fraction of crystalline Si decreases exponentially with thickness, and the characteristic decay length is a function of substrate temperature. At -14 V below the floating potential, the deposited film is amorphous with a large void content. These observations demonstrate the subtle tradeoff between enhanced surface mobility and defect creation by low energy ion bombardment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 75
Copyright
Copyright © Materials Research Society 1995

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