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In-Situ and High-Resolution Tem Observation of Interfacial Reactions in Metal-Silicon Multilayers

Published online by Cambridge University Press:  25 February 2011

Karen Holloway ,
Khiem BA Do  and
Robert Sinclair
Karen Holloway
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
Khiem BA Do
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
Robert Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
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Abstract

Titanium-silicon and molybdenum-silicon multilayers have been investigated in cross-section using a high resolution TEM with a point-to-point resolution of .22 nm. This resolution has allowed us to confirm the amorphous nature both of the intermixed layers which form at the metal-silicon interfaces on sputter deposition, and of the Ti-Si reaction product which forms at temperatures below which crystalline silicides nucleate.

The bulk studies are complemented by in-situ annealing experiments in the high-resolution microscope. Phase reactions in the multilayers can be followed in real time, allowing direct observation of the formation of the amorphous alloy, the appearance of rows of Kirkendall voids, and the crystallization and growth of silicide phases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987 , 167
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Murarka, S.P. in Silicide for VLSI Applications, Academic Press, New York (1983).Google Scholar
2.Herd, S., Tu, K.N., and Ahn, K.Y., Appl. Phys. Lett. 42, 599 (1983).Google Scholar
3.Natan, M., J. Vac. Sci. Technol. B 4, 1404 (1986)Google Scholar
4.Holloway, K. and Sinclair, R., J. Appl. Phys. 61, 1359 (1987).Google Scholar
5.Schwarz, R.B. and Johnson, W.L., Phys. Rev. Lett. 51,415 (1983).Google Scholar
6.Clemens, B.M., J. Non Cryst. Solids 61&62,817 (1984).Google Scholar
7.Barbee, T. and Keith, D.L., in Synthesis and Properties of Metastable Phases, edited by Machlin, E.S. and Rowland, T.J. (AIME, New York, 1980), p. 93.Google Scholar
8.Bravman, J.C. and Sinclair, R., J. Electron Microsc. Tech. 1, 53 (1984).Google Scholar
9.Sinclair, R., Parker, M.A., and Kim, K.B., Ultramicroscopy, in press.Google Scholar
10.Chu, W.K., Lau, S.S., Mayer, J.W., Muller, J., and Tu, K.M., Thin Solid Films 25, 393 (1975).Google Scholar
11.Holloway, K. and Sinclair, R., J. Less Common Metals, in press.Google Scholar
12.Petford-Long, A., Steams, M.B., Chang, C.-H., Stearns, D.G., Ceglio, N.M., and Hawryluk, A.M., J. Appl. Phys. 61, 1422 (1987).Google Scholar