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In-plane Thermal Conductivity Determination in Silicon on Insulator (SOI) Structures Through Thermoreflectance Measurements

Published online by Cambridge University Press:  01 February 2011

Max S Aubain  and
Prabhakar Bandaru
Max S Aubain
Affiliation:
[email protected], University of California-San Diego, Mechanical Engineering Department, Materials Science and Engineering Program, La Jolla, California, United States
Prabhakar Bandaru
Affiliation:
[email protected], University of California-San Diego, Mechanical Engineering Department, Materials Science and Engineering Program, La Jolla, California, United States
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Abstract

Heat dissipation in Silicon-On-Insulator (SOI) based microdevices is hindered in the silicon device layer by the low thermal conductivity of the neighboring oxide and reduced in-plane thermal conductivity in very thin layers. This work shows that the in-plane thermal conductivity of a 260 nm thick device layers in SOI substrates can be characterized by measuring the temperature distributions induced by AC joule heating through microfabricated heaters by a scanning thermoreflectance technique. These data were fitted to numerical solutions of the heat conduction equation calculated using COMSOL® Multiphysics modeling software, suggesting the in-plane thermal conductivity of the device layer is reduced to 90±10 W/(m.K), which is consistent with phonon boundary scattering theory predictions.

Keywords

thermal conductivitySithin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1267: Symposium DD – Thermoelectric Materials 2010-Growth, Properties, Novel Characterization Methods and Applications , 2010 , 1267-DD12-01
Copyright
Copyright © Materials Research Society 2010

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References

1 Asheghi, M. Leung, Y.K. Wong, S.S. and Goodson, K.E. Appl. Phys. Lett. 71, 1798 (1997).Google Scholar
2 Holland, M.G. Physical Review 132 2461 (1963).Google Scholar
3 Sondheimer, E.H. Advances in Physics 11 (1952).Google Scholar
4 Asheghi, M. Touzelbaev, M.N. Goodson, K.E. Leung, Y.K. and Wong, S.S. J. Heat Trans. 120 30 (1998).Google Scholar
5 Ju, Y.S. K. Kurabayashi and Goodson, K.E. Thin Solid Films 339, 160 (1999).10.1016/S0040-6090(98)01328-5Google Scholar
6 Ju, Y.S. and Goodson, K.E. Appl. Phys. Lett. 74 3005 (1999).Google Scholar
7 Mazumder, S. and Majumdar, A. J. Heat Trans. 123 749–759 (2001).Google Scholar
8 Narumanchi, S. V. J. Murthy, J. Y. and Amon, C. H. J. Heat Trans. 126 946 (2004).Google Scholar
9 Liu, W. and Asheghi, M. J. Heat Trans. 128 75 (2006).Google Scholar
10 Tessier, G. Jerosolimski, G. Holé, S., Fournier, D. Filloy, C. Rev. Sci. Instrum. 74 495 (2003)Google Scholar
11 Christofferson, J. Maize, K. Ezzahri, Y. Shabani, J. Wang, X. and Shakouri, A. Journal of Electronic Packaging 130 041101 (2008).Google Scholar
12 Christofferson, J. and Shakouri, A. Rev. Sci. Instrum. 76 024903 (2005).Google Scholar
13 Grauby, S. Forget, B.C. Holé, S. and Fournier, D. Rev. Sci. Instrum. 70 3603 (1999).10.1063/1.1149966Google Scholar
14 Cahill, D.G. Rev. Sci. Instrum. 61 802 (1989).Google Scholar
15 Cahill, D.G. Ford, W.K. Goodson, K.E. Mahan, G.D. Majumdar, A. Maris, H.J. Merlin, R. and Phillpot, S.R. J. Appl. Phys. 93 793 (2003).Google Scholar
16 Chen, G. J. Heat Trans. 119 220 (1997).Google Scholar
17 Brockhouse, B.N. Phys. Rev. Lett. 2 256 (1959).Google Scholar