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In-plane Thermal and Electronic Transport in Quantum Dot Superlattice

Published online by Cambridge University Press:  21 March 2011

A. Khitun ,
J.L. Liu ,
K.L. Wang  and
G. Chen
A. Khitun
Affiliation:
Device Research Laboratory, Electrical Engineering DepartmentUniversity of California - Los Angeles, Los Angeles, California 90095
J.L. Liu
Affiliation:
Device Research Laboratory, Electrical Engineering DepartmentUniversity of California - Los Angeles, Los Angeles, California 90095
K.L. Wang
Affiliation:
Device Research Laboratory, Electrical Engineering DepartmentUniversity of California - Los Angeles, Los Angeles, California 90095
G. Chen
Affiliation:
Nanoscale Heat Transfer and Thermoelectricity Laboratory, Department of Mechanical and Aerospace Engineering University of California - Los Angeles, Los Angeles, California 90095 E-mail: [email protected]: (310) 206-7987fax: (310) 206-4685
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Abstract

We present a theoretical model in order to describe both thermal and electronic in-plane transports in quantum dot superlattice. The model takes into account the modifications of electron and phonon transport due to the space confinement caused by the mismatch in electronic and thermal properties between dot and host materials. The developed model provides the analysis of the in-plane superlattice electronic and thermal properties versus quantum dot size and their arrangement. Numerical calculations were carried out for a structure that consists of multiple layers of Si with regimented germanium quantum dots. The simulation results of the lattice thermal conductivity are in a good agreement with experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 677: Symposium AA – Advances in Materials Theory and Modeling–Bridging Over Multiple-Length and Time Scales , 2001 , AA4.9
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1] Jin, G., Liu, J.L., Thomas, S.G., Luo, Y.H., Wang, K.L., Nguyen, B.-Y., Appl. Phys. Lett., 75, 2752 (1999).Google Scholar
[2] Harman, T.C., Taylor, P.J., Spears, D.L. and Walsh, M.P., in Abstracts of 41st Electronic Materials Conference, Santa Barbara, (1999).Google Scholar
[3]. Sun, X., Zhang, Z. and Dresselhaus, M.S., Appl. Phys. Lett., 74, N26, 4005, (1999).Google Scholar
[4] Goffaux, C., Lousse, V., and Vigneron, J.P. Phys. Rev. B 62, N. 11, 7133 (2000).Google Scholar
[5] Takagaki, Y. and Ferry, D.K., Phys. Rev. B 45, N.15, 8506 (1992).Google Scholar
[6] Khitun, A., Wang, K.L., and Chen, G., Nanotechnology 11, 327 (2000).Google Scholar
[7] Ensslin, K. and Petroff, P., Phys. Rev. B, 41, 12307 (1990).Google Scholar
[8]. Furuya, K., Jpn. J. Appl. Phys. 30, L82 (1991).Google Scholar
[9] Srivastava, G.P., The Physics of Phonons (Adam Hilger, New York, 1990), p.128.Google Scholar
[10] Khitun, A., Balandin, A., Liu, J.L., and Wang, K.L., J. Appl. Phys. 88, N.2, 696 (2000).Google Scholar