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In-Plane Crystallographic Texture of Bcc Metal thin films on Amorphous Substrates

Published online by Cambridge University Press:  10 February 2011

J.M.E. Harper
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
K.P. Rodbell
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
E.G. Colgan
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
R.H. Hammond
Affiliation:
Stanford University, Stanford, CA 94305
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Abstract

We show that dramatically different in-plane crystallographic textures can be produced in body centered cubic (bcc) metal thin films deposited under different conditions. The orientation distribution of polycrystalline bcc thin films on amorphous substrates often has a strong (110) fiber texture, and an in-plane texture may develop when deposition takes place with an off-normal incidence flux of energetic ions or atoms. Three orientations in Nb films have been observed in which the energetic particle flux coincides with crystal channeling directions. In-plane orientations in Mo films have also been obtained in magnetron sputtering systems. The selected orientations are reviewed, and examples are given in which the in-plane orientation of Mo deposited in two similar magnetron sputtering systems differs by a 90° rotation. The origins of in-plane texture in rectangular magnetron sputtering systems are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Thompson, C.V. and Carel, R., Mat. Sci. and Eng. B32, 211 (1995)Google Scholar
2. Karpenko, O.P., Bilello, J.C. and Yalisove, S.M., J. Appl. Phys. 76, 4610 (1994)Google Scholar
3. Mclntyre, P., Ressler, K.G., Sonnenberg, N., Cima, M.J., J Vac. Sci. Technol. A14, 210 (1996)Google Scholar
4. Kaufman, H.R., Cuomo, J.J. and Harper, J.M.E., J. Vac. Sci. Technol. 21, 725 (1982)Google Scholar
5. Cuomo, J.J., Guarnieri, C.R., Hammond, R.H., Harper, J.M.E., Herd, S. and Yu, D.S., IBM Tech Disclos. Bull. 25, 3331 (1982)Google Scholar
6. Bradley, R.M., Harper, J.M.E. and Smith, D.A., J. Appl. Phys. 60, 4160 (1986)Google Scholar
7. Ji, H., Was, G.S. and Jones, J.W., Proc. Mat. Res. Soc. (to be published 1997)Google Scholar
8. Yu, L S, Harper, J.M.E., Cuomo, J.J. and Smith, D.A., Appl. Phys Lett. 47, 932 (1985)Google Scholar
9. Malhotra, A.K., Yalisove, S.M. and Bilello, J. C., Proc. Mat. Res. Soc. 403, 33 (1996)Google Scholar
10. Sonnenberg, N., Longo, A.S., Cima, M.J., Chang, B.P., Ressler, K.G., Mclntyre, P.C. and Lu, Y.P., J. Appl. Phys. 74, 1027 (1993)Google Scholar
11. Iijima, Y., Onabe, K., Futaki, N., Sadakata, N., Kohno, O. and Y. lkeno, J. Appl. Phys. 74, 1905 (1993);Google Scholar
Wang, C.P., Do, K., Geballe, T.H., Beasley, M.R. and Hammond, R.H. (to be published)Google Scholar