Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2024-12-27T01:55:59.023Z Has data issue: false hasContentIssue false
  • English
  • Français

In-Plane Crystallographic Texture of Bcc Metal thin films on Amorphous Substrates

Published online by Cambridge University Press:  10 February 2011

J.M.E. Harper ,
K.P. Rodbell ,
E.G. Colgan  and
R.H. Hammond
J.M.E. Harper
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
K.P. Rodbell
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
E.G. Colgan
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
R.H. Hammond
Affiliation:
Stanford University, Stanford, CA 94305
Get access

Abstract

We show that dramatically different in-plane crystallographic textures can be produced in body centered cubic (bcc) metal thin films deposited under different conditions. The orientation distribution of polycrystalline bcc thin films on amorphous substrates often has a strong (110) fiber texture, and an in-plane texture may develop when deposition takes place with an off-normal incidence flux of energetic ions or atoms. Three orientations in Nb films have been observed in which the energetic particle flux coincides with crystal channeling directions. In-plane orientations in Mo films have also been obtained in magnetron sputtering systems. The selected orientations are reviewed, and examples are given in which the in-plane orientation of Mo deposited in two similar magnetron sputtering systems differs by a 90° rotation. The origins of in-plane texture in rectangular magnetron sputtering systems are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 27
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Thompson, C.V. and Carel, R., Mat. Sci. and Eng. B32, 211 (1995)Google Scholar
2. Karpenko, O.P., Bilello, J.C. and Yalisove, S.M., J. Appl. Phys. 76, 4610 (1994)Google Scholar
3. Mclntyre, P., Ressler, K.G., Sonnenberg, N., Cima, M.J., J Vac. Sci. Technol. A14, 210 (1996)Google Scholar
4. Kaufman, H.R., Cuomo, J.J. and Harper, J.M.E., J. Vac. Sci. Technol. 21, 725 (1982)Google Scholar
5. Cuomo, J.J., Guarnieri, C.R., Hammond, R.H., Harper, J.M.E., Herd, S. and Yu, D.S., IBM Tech Disclos. Bull. 25, 3331 (1982)Google Scholar
6. Bradley, R.M., Harper, J.M.E. and Smith, D.A., J. Appl. Phys. 60, 4160 (1986)Google Scholar
7. Ji, H., Was, G.S. and Jones, J.W., Proc. Mat. Res. Soc. (to be published 1997)Google Scholar
8. Yu, L S, Harper, J.M.E., Cuomo, J.J. and Smith, D.A., Appl. Phys Lett. 47, 932 (1985)Google Scholar
9. Malhotra, A.K., Yalisove, S.M. and Bilello, J. C., Proc. Mat. Res. Soc. 403, 33 (1996)Google Scholar
10. Sonnenberg, N., Longo, A.S., Cima, M.J., Chang, B.P., Ressler, K.G., Mclntyre, P.C. and Lu, Y.P., J. Appl. Phys. 74, 1027 (1993)Google Scholar
11. Iijima, Y., Onabe, K., Futaki, N., Sadakata, N., Kohno, O. and Y. lkeno, J. Appl. Phys. 74, 1905 (1993);Google Scholar
Wang, C.P., Do, K., Geballe, T.H., Beasley, M.R. and Hammond, R.H. (to be published)Google Scholar