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InP Layers Grown by Molecular Beam Epitaxy at Low Substrate Temperature

Published online by Cambridge University Press:  15 February 2011

K. Xie ,
C. R. Wie  and
G. W. Wicks
K. Xie
Affiliation:
State University of New York at Buffalo, Dept. of Electrical and Computer Engineering, Bonner Hall, Buffalo, NY 14260
C. R. Wie
Affiliation:
State University of New York at Buffalo, Dept. of Electrical and Computer Engineering, Bonner Hall, Buffalo, NY 14260
G. W. Wicks
Affiliation:
Institute of Optics, University of Rochester, Rochester, NY 12627
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Abstract

InP layers were grown on semi-insulating InP wafer by molecular beam epitaxy (MBE) at low substrate temperatures (<200° C), using solid phosphorus source. We use x-ray diffraction, double crystal x-ray rocking curve, Auger electron spectroscopy, and temperature-dependent Van der Pauw and Hall effect measurements to characterize the as-grown and annealed InP layers. It is found that the InP layer is in poly-crystal state with excess P over 7 at%. The layers became single crystal after annealing above 400°C. The resistivity of the InP layer decreased from 60 Ωcm for an as-grown sample to 0.82 Ωcm after 400°C RTA annealing. The different role of excess P as compared to the role played by excess As in LT-GaAs is discussed based on the P properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 265
Copyright
Copyright © Materials Research Society 1992

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