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InN-Based Ohmic Contacts to AlInN

Published online by Cambridge University Press:  10 February 2011

S. M. Donovan ,
F. Ren ,
J. D. MacKenzie ,
C. R. Abernathy ,
S. J. Pearton  and
K. Jones
S. M. Donovan
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville,
F. Ren
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ,
J. D. MacKenzie
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville,
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville,
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville,
K. Jones
Affiliation:
U. S. Army Research Lab, Ft. Monmouth, NJ.
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Abstract

In order to maximize the performance of III-Nitride devices, it is necessary to develop thermally stable low resistance Ohmic contacts to III-N based electronic structures. This paper reports on the utility of InN as an aid to contact formation on widegap materials such as InAIN. For n-type materials, several questions relating to the growth conditions have been explored. Specifically, the impact of substrate type (GaAs vs. Sapphire), cap layer growth temperature and V/III ratio on contact resistance has been investigated. It was found that the use of sapphire substrates combined with high growth temperatures (575°C) and high V/III ratios produced acceptable contact resistances (∼10−6Ohm-cm2) to InAIN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1067
Copyright
Copyright © Materials Research Society 1997

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References

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