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In-Line Ambient Impurity Measurement on a Rapid Thermal Process Chamber by Atmospheric Pressure Ionisation Mass Spectrometry

Published online by Cambridge University Press:  10 February 2011

Eiichi Kondoh ,
Guy Vereecke ,
Marc M. Heyns ,
Karen Maex ,
Thomas Gutt  and
Zsolt Nwnyeil
Eiichi Kondoh
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Guy Vereecke
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Marc M. Heyns
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Karen Maex
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium. INSYS, Katholieke Universiteit Leuven, Belgium
Thomas Gutt
Affiliation:
Steag-AST elektronik GmbH, DaimlerstraBe 10, 89160 Dornstadt, Germany.
Zsolt Nwnyeil
Affiliation:
Steag-AST elektronik GmbH, DaimlerstraBe 10, 89160 Dornstadt, Germany.
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Abstract

Gaseous impurities in the chamber of a SHS2800ε rapid thermal processor were quantitatively measured by using atmospheric pressure ionisation mass spectrometry (APIMS). APIMS is a very sensitive technique to detect trace impurities in a bulk (1 atm) gas. A wide dynamic range (0.1 ppb - 10 ppm) measurement was successfully performed, which allowed in-situ monitoring of impurities during RTP. This work reports the fundamental behaviour of ambient impurities originating from different sources. The sources discussed in this paper are threefold: system background, wafer loading, and the wafer itself. Ambient management requires a better understanding of the independent contribution of each source on processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 51
Copyright
Copyright © Materials Research Society 1998

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References

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