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Injection of point defects by oxidation of AlGaAs

Published online by Cambridge University Press:  01 February 2011

Danielle R. Chamberlin ,
Scott A. McHugo ,
Dariusz Burak ,
Deyon Burke ,
Tim Osentowski  and
S. Jeffrey Rosner
Danielle R. Chamberlin
Affiliation:
Agilent Technologies, Palo Alto, CA 94304
Scott A. McHugo
Affiliation:
Agilent Technologies, Palo Alto, CA 94304
Dariusz Burak
Affiliation:
Agilent Technologies, Palo Alto, CA 94304
Deyon Burke
Affiliation:
Agilent Technologies, Palo Alto, CA 94304
Tim Osentowski
Affiliation:
Agilent Technologies, Palo Alto, CA 94304
S. Jeffrey Rosner
Affiliation:
Agilent Technologies, Palo Alto, CA 94304
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Abstract

Injection of point defects into GaAs/AlxGa1-xAs heterostructures by oxidation of AlxGa1-xAs is investigated. The blueshift of the PL emission from GaAs quantum wells is measured as a function of rapid thermal annealing conditions in as-grown and thermally oxidized samples. Contrary to published data for point defect injection by oxidation of GaAs, oxidation of AlxGa1-xAs appears to reduce the interdiffusion of the quantum wells. The PL peak shifts after annealing have been fit assuming Al diffusion in the quantum wells and solving the singleparticle Schrödinger equation. These fits show a reduction in group-III diffusivity of over an order of magnitude with an oxidized layer of AlxGa1-xAs on the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F13.4
Copyright
Copyright © Materials Research Society 2002

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