Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-05T15:24:24.372Z Has data issue: false hasContentIssue false

Initial Phase formation at the Interface of Ni, Pd, or Pt and Si

Published online by Cambridge University Press:  22 February 2011

R. J. Nemanich
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
C. C. Tsai
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
B. L. Stafford
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
J. R. Abelson
Affiliation:
Standford Electronics Laboratory, Standford, CA 94305
T. W. Sigmon
Affiliation:
Standford Electronics Laboratory, Standford, CA 94305
Get access

Abstract

The initial phase formation at the interface of the near noble metals (Ni, Pd, and Pt) and Si is studied by Raman spectroscopy and Rutherford ion-backscattering. The results show that a crystalline Pd2Si forms immediately at the interface of Pd and Si while a disordered intermixed phase of composition ∼M2Si forms for Ni and Pt at 150°C. The results are discussed in terms of the disorder due to the kinetic process and the stability of the crystalline phase.

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ottaviani, G., J. Vac. Sci. Technol. 16, 1112(1979).Google Scholar
2. Rubloff, G. W. and Ho, P. S., Thin Solid Films 93, 21(1982).Google Scholar
3. For a review see Knights, J. C. and Lucovsky, G., CRC Crit. Rev. in Solid State and Mater. Sci., 211(1980).Google Scholar
4. Fritzsche, H. and Tsai, C. C., Solar Mater. 1, 471(1979).Google Scholar
5. Nemanich, R. J., Tsai, C. C., Thompson, M. J., and Sigmon, T. W., J. Vac. Sci. Technol. 19, 685(1981).Google Scholar
6. Nemanich, R. J., Sigmon, T. W., Johnson, N. M., Moyer, M. D., and Lau, S. S., in Laser and Electron-Beam Solid Interactions and Materials Processing, edited by Gibbons, J. F., Hess, L. D., and Sigmon, T. W.(North-Holland, New York,1981), p. 541.Google Scholar
7. Nemanich, R. J., Thompson, M. J., Jackson, W. B., Tsai, C. C., and Stafford, B. L., J. Vac. Sci. Technol. 19, 685(1981).Google Scholar
8. Tsaur, B. Y. and Nicolet, M A., Appl. Phys. Lett. 37, 708(1980).Google Scholar