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Initial Obsevation of the Crystal-Amorphous Transition and the Formation of Ripple Patterns on Silicon Induced by 7 ps Pulses at 1.05 µm

Published online by Cambridge University Press:  22 February 2011

Ian W. Boyd ,
Steven C. Moss ,
Thomas F. Boggess  and
Arthur L. Smirl
Ian W. Boyd
Affiliation:
Center for Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, Texas 76203
Steven C. Moss
Affiliation:
Center for Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, Texas 76203
Thomas F. Boggess
Affiliation:
Center for Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, Texas 76203
Arthur L. Smirl
Affiliation:
Center for Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, Texas 76203
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Abstract

We describe our preliminary observations of the interaction of short pulse 1 µm radiation with crystalline silicon. In particular we find that for 7 ps pulses, but not for 46 ps pulses, the crystal-amorphous transition can be induced on the Si surface. Additionally, we have measured the single shot melting threshold for c-Si to be 0.6 ± 0.2 J cm-2 for 7 ps pulses. The formation of ripple patterns and other surface structures with pulses as short as 4 ps is also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 203
Copyright
Copyright © Materials Research Society 1984

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References

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