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Initial Growth of Polycrystalline Si and GeSi Alloys in an RTP System

Published online by Cambridge University Press:  15 February 2011

J. B. Rem ,
C. Salm ,
J. H. Klootwijk ,
M. H. H. Weusthof ,
J. Holleman  and
J. F. Verweij
J. B. Rem
Affiliation:
MESA Research Institute, University of Twente, PO Box 217, NL-7500 AE Enschede, The Netherlands
C. Salm
Affiliation:
MESA Research Institute, University of Twente, PO Box 217, NL-7500 AE Enschede, The Netherlands
J. H. Klootwijk
Affiliation:
MESA Research Institute, University of Twente, PO Box 217, NL-7500 AE Enschede, The Netherlands
M. H. H. Weusthof
Affiliation:
MESA Research Institute, University of Twente, PO Box 217, NL-7500 AE Enschede, The Netherlands
J. Holleman
Affiliation:
MESA Research Institute, University of Twente, PO Box 217, NL-7500 AE Enschede, The Netherlands
J. F. Verweij
Affiliation:
MESA Research Institute, University of Twente, PO Box 217, NL-7500 AE Enschede, The Netherlands
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Abstract

The initial growth of polycrystalline silicon (Si) and germanium-silicon alloys (GexSi1−x) from SiH4 and GeH4, where x is in the range of 0-0.4, in an RTMP reactor has been investigated using an in situ monitoring technique called reflectometry. An inhibition time is found which, for poly-Si in the temperature range of 550–650°C decreases with increasing temperature and for poly-GexSi1−x in the temperature range of 500–625°C shows the same behavior. The effect of total pressure, ranging from 0.10–1.20 mbar, is even stronger: an increasing pressure sharply decreases the inhibition time. For a selective deposition a low SiH4 and GeH4 partial pressure seems favorable, while for a non-selective deposition of poly-GexSi1−x alloys on (gate) oxides (for Thin Film Transistor applications) a high pressure or a pressure pulse at the start of the deposition process can be used.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 323
Copyright
Copyright © Materials Research Society 1995

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References

1 Bruce, R. et.al., Information Displays 10/91, 14 (1991)Google Scholar
2 Washizuka, I., IEDM 93, 937 (1993)Google Scholar
3 Thompson, M.J., J. Non-Cryst. Sol. 137&138, 1209 (1991)Google Scholar
4 King, T-J and Saraswat, K.C., IEEE El. Dev. Lett. 13, 309 (1992)Google Scholar
5 Salm, C. et.al., MRS Proc. 343, 721 (1994)Google Scholar
6 King, T-J and Saraswat, K.C., IEEE Trans. El. Dev. 41, 1581 (1994)Google Scholar
7 Holleman, J. et.al., J. Electrochem. Soc. 140, 1717 (1993)Google Scholar
8 Öztürk, M.C. et.al., J. Electronic Mat. 19, 1129 (1990)Google Scholar
9 Violette, K.E. et.al., J. Electrochem. Soc. 141, 3269 (1994)Google Scholar
10 Nielsen, A.E., Kinetics of precipitation, Pergamon Press (1964)Google Scholar