Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-29T10:25:53.589Z Has data issue: false hasContentIssue false
  • English
  • Français

Initial Evolution of Cobalt Silicides in The Cobalt/Amorphous-Silicon Thin Film System

Published online by Cambridge University Press:  26 July 2012

Hideo Miura ,
En Ma  and
Carl V. Thompson
Hideo Miura
Affiliation:
MERL, Hitachi, Ltd., 502 Kandatsu, Tsuchiura, Ibaraki 300, Japan and Massachusetts Institute of Technology, Department of Materials Science and Engineering.
En Ma
Affiliation:
Massachusetts Institute of Technology, Department of Materials Science and Engineering, 77 Mass. Ave. Cambridge, MA 02139.
Carl V. Thompson
Affiliation:
Massachusetts Institute of Technology, Department of Materials Science and Engineering, 77 Mass. Ave. Cambridge, MA 02139.
Get access

Abstract

The initial phase formation sequence for reactions in cobalt/ amorphous-silicon multi-layer thin films has been investigated using a combination of differential scanning calorimetry, thin film X-ray diffraction, and transmission electron microscopy. Multilayer thin films with various overall atomic concentration ratios and various bilayer thicknesses were used in this study. It was found that crystalline CoSi is always the first phase to nucleate in the interdiffused amorphous layer which preexisted at the as-deposited coba It/amorphous-si licon interface. The CoSi nucleates at temperatures as low as about 530 K, but does not grow until the next phase, which is Co2 Si when excess Co is available, starts to nucleate and grow. The activation energy of the CoSi nucleation was found to be 1.-6±0.1 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 139
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Gosele, U. and Tu, K.N., J.AppI.Phys., 53, 3252 (1983).Google Scholar
2. Lau., S.S. Mayer, J.W., and Tu, K.N., J.AppI.Phys., 49, 4005 (1978)Google Scholar
3. Lien, C.D., Nicolet, M-A., Pai, C.S., and Lau, S.S., Appl. Phys. A. 36, 153 (1985).Google Scholar
4. Veuillen, J.Y., Derrien, J., Badoz, P.A., Rosencher, E., and d'Anterroches, C., Appl. Phys. Lett., 51, 1448 (1987).Google Scholar
5. Nathan, M., J. Appl. Phys., 63, 5534 (1988).Google Scholar
6. Ruterana, P., Houdy, P., and Boher, P., J.. Appl. Phys., 68, 1033 (1990).Google Scholar
7. Clevenger, L.A. and Thompson, C.V., J.Appl.Phys., 67, 1325 (1989).Google Scholar
8. Holloway, K., Sinclair, R., and Nathan, M., J. Vac. Sci. Technol. A. 7, 1479 (1989).Google Scholar
9. Kissinger, H.E., Analyt. Chem., 29, 1702 (1957).Google Scholar