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Initial Buffer Layers on the Growth of InGaP on Si by MBE

Published online by Cambridge University Press:  10 February 2011

H. Kawanami ,
S. Ghosh ,
I. Sakata  and
T. Sekigawa
H. Kawanami
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, JAPAN.
S. Ghosh
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, JAPAN.
I. Sakata
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, JAPAN.
T. Sekigawa
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, JAPAN.
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Abstract

Single domain InxGa(1-x)P (x=0.3) films were successfully grown on Si(001) misoriented substrates by molecular beam epitaxy with a solid phosphorous source. The effects of interfacial buffer layers such as InGaP (i.e. direct growth without buffer layer), GaP, AlP, and GaAs were examined. Also a Si epitaxial buffer layer was tried to control the Si surface structure. Mirror like surfaces were obtained for all films with RHEED patterns of (2×1) single domain surface structure. PL intensities for all films indicated almost the same values except for the films with a Si epitaxial buffer layer. The films with a Si epitaxial buffer layer had almost three times larger PL intensities than the films without Si epitaxial buffer layer. The results suggest incomplete cleaning of the Si surface by the high temperature (1000 °C) treatment and possibility of surface structure control for Si substrates by a Si epitaxial buffer layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 33
Copyright
Copyright © Materials Research Society 1997

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