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Inhomogeneous Semiconductor Device Modeling Using Hydrodynamic Balance Equations

Published online by Cambridge University Press:  21 February 2011

J. Cai
Affiliation:
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030
H.L. Cui
Affiliation:
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030
N.J.M. Horing
Affiliation:
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030
X.L. Lei
Affiliation:
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030 Shanghai Institute of Metallurgy, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China
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Abstract

A semiconductor device modeling program based on hydrodynamic balance equations is developed. It is capable of treating multiple carriers in compositionally nonuniform (such as heterostructures) and spatially inhomogeneous device structures, as well as high electric field and associated nonlinear effects. Unlike other balance equation based approaches to device modeling, where the various relaxation rates are imported from Monte Carlo calculations or simply assumed to be constant, our approach is based on the premise of computing these rates as part of the simulation, in the form of nonlinear frictional force and energy transfer functions, with full account of dynamical screening and other quantum mechanical effects embodied in the random phase approximation dielectric function of the system. The simplicity of our technique permit fast and economical modeling of device performance characteristics, requiring only a fraction of the CPU time needed for Monte Carlo simulations.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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