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Inhomogeneous Semiconductor Device Modeling Using Hydrodynamic Balance Equations
Published online by Cambridge University Press: 21 February 2011
Abstract
A semiconductor device modeling program based on hydrodynamic balance equations is developed. It is capable of treating multiple carriers in compositionally nonuniform (such as heterostructures) and spatially inhomogeneous device structures, as well as high electric field and associated nonlinear effects. Unlike other balance equation based approaches to device modeling, where the various relaxation rates are imported from Monte Carlo calculations or simply assumed to be constant, our approach is based on the premise of computing these rates as part of the simulation, in the form of nonlinear frictional force and energy transfer functions, with full account of dynamical screening and other quantum mechanical effects embodied in the random phase approximation dielectric function of the system. The simplicity of our technique permit fast and economical modeling of device performance characteristics, requiring only a fraction of the CPU time needed for Monte Carlo simulations.
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- Copyright © Materials Research Society 1994
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