Hostname: page-component-f554764f5-fnl2l Total loading time: 0 Render date: 2025-04-11T23:01:17.319Z Has data issue: false hasContentIssue false
  • English
  • Français

Ingan Quantum Dots Fabricated On Aigan Surfaces -Growth Mechanism And Optical Propertiesh-

Published online by Cambridge University Press:  10 February 2011

H. Hirayama ,
S. Tanaka ,
P. Ramvall  and
Y. Aoyagi
H. Hirayama
Affiliation:
The Institute of Physical and Chemical Research (RIKEN) Hirosawa 2- 1, Wako- shi, Saitama, 351- 01, Japan, [email protected]
S. Tanaka
Affiliation:
The Institute of Physical and Chemical Research (RIKEN) Hirosawa 2- 1, Wako- shi, Saitama, 351- 01, Japan, [email protected]
P. Ramvall
Affiliation:
The Institute of Physical and Chemical Research (RIKEN) Hirosawa 2- 1, Wako- shi, Saitama, 351- 01, Japan, [email protected]
Y. Aoyagi
Affiliation:
The Institute of Physical and Chemical Research (RIKEN) Hirosawa 2- 1, Wako- shi, Saitama, 351- 01, Japan, [email protected]
Get access

Abstract

We demonstrate photoluminescence from self- assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal- organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step- flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ˜10nm and ˜5nm, respectively, by an atomic- force- microscope (AFM). Indium mole fraction of InxGal−x N QDs is controlled from x=˜0.22 to ˜0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature- dependent energy shift of the photoluminescence peak- energy shows a localization behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 737
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Jap. J. Appl. Phys. 36, L1059 (1997).Google Scholar
2. Nakamura, S., Mukai, T., and Senoh, M., Appl. Phys. Lett. 64, 1687 (1994).Google Scholar
3. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 69, 3034 (1996).Google Scholar
4. Suzuki, M., and Uenoyama, T., Jpn. J. Appl. Phys. 35, 1420 (1996).Google Scholar
5. Uenoyama, T., Phys. Rev. B 51, 10228 (1995).Google Scholar
6. Sugawara, M., The Second International Conference on Nitride Semiconductors (ICNS'97), Tu3- 1 220 (1997).Google Scholar
7. Narukawa, Y., Kawakami, Y., Funato, M., Fujita, Sz., Fujita, Sg. and Nakamura, S., Appl. Phys. Lett. 70, 891 (1997).Google Scholar
8. Hirayama, H., Matsunaga, K., Asada, M., and Suematsu, Y., Electron. Lett. 30, 142 (1994).Google Scholar
9. Perlin, P., Osinski, M., and Eliseev, P. G., Proc. of III- V Nitrides, Boston, Massachusetts, U.S.A., 1173 (1996).Google Scholar
10. Perlin, P., Iota, V., Weinstein, B. A., Wisniewski, P., Suski, T., Eliseev, P. G., and Osinski, M., Appl. Phys. Lett. 70, 2993 (1997).Google Scholar
11. Harris, C. I., Monemar, B., Amano, H., and Akasaki, I., Appl. Phys. Lett. 67, 80 (1995).Google Scholar
12. Cohen, E. and Sturge, M. D., Phys. Rev. B 25, 3828 (1982).Google Scholar
13. Tanaka, S., Iwai, S., and Aoyagi, Y., Appl. Phys. Lett. 69, 4096 (1996).Google Scholar
14. Tanaka, S., Hirayama, H., Iwai, S., and Aoyagi, Y., Appl. Phys. Lett. 71, 1299 (1997).Google Scholar
15. Nakamura, S., Microelectronics Journal 25, 651 (1994).Google Scholar
16. Chichibu, S., Azuhata, T., Sota, T., and Nakamura, S., Appl. Phys. Lett. 70, 2822 (1997).Google Scholar
17. Grundmann, M., Christen, J., Ledentsov, N. N., Bohrer, J., Bimberg, D., Ruvimov, S. S., Werner, P., Richter, U., Gosele, U., Heydenreich, J., Ustinov, V. M., Egorov, A. Y., Zhukov, A. E., Kop'ev, P. S., and Alferov, Z. I., Phys. Rev. Lett. 74, 4043 (1995).Google Scholar