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InGaN MQW LED structures using AlN/GaN DBR and Ag-based p-contact

Published online by Cambridge University Press:  12 April 2011

K. Lee ,
L. E. Rodak ,
V. Kumbham ,
V. Narang ,
J. S. Dudding ,
R. Rahimi ,
S. Kuchibhatla ,
L. Hornak  and
D. Korakakis
K. Lee
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
L. E. Rodak
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
V. Kumbham
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
V. Narang
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506, USA
J. S. Dudding
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
R. Rahimi
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
S. Kuchibhatla
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
L. Hornak
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
D. Korakakis
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
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Abstract

Resonant cavity light emitting diode (RCLED) structure was grown using digital AlGaN/GaN Distributed Bragg Reflector (DBR) and Ag-based p-contact. A five period of InGaN/GaN multi-quantum well (MQW) layers are placed between these two high reflectance mirrors. Digital AlGaN/GaN DBR have a maximum reflectivity of about 60 % at 445 nm and 90 % at 439 nm for 6 period and 12 period, respectively. Ag-based p-contact exhibits an average reflectance of around 85-90 % for a wavelength of 400-600 nm. The light output intensity of the RCLEDs with 12 period digital AlGaN/GaN DBR is higher by a factor of 3 as compared to that of the similar structure without digital AlGaN/GaN DBR at an injection current of 50 mA.

Keywords

III-Voptoelectronicvapor phase epitaxy (VPE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1288: Symposium G – Novel Fabrication Methods for Electronic Devices , 2011 , mrsf10-1288-g11-21
Copyright
Copyright © Materials Research Society 2011

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References

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