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InGaAs Solar Cells Grown on Wafer-Bonded InP/Si Epitaxial Templates

Published online by Cambridge University Press:  01 February 2011

James M. Zahler
Affiliation:
[email protected], Aonex Technologies, Pasadena, CA, 91106, United States
Katsuaki Tanabe
Affiliation:
[email protected], California Institute of Technology, Thomas J. Watson Laboratory of Applied Physics, Mail Stop Code 128-95, 1200 E. California Blvd, Pasadena, CA, 91125, United States, 626-395-2193, 626-844-9320
Corinne Ladous
Affiliation:
[email protected], Aonex Technologies, Pasadena, CA, 91106, United States
Tom Pinnington
Affiliation:
[email protected], Aonex Technologies, Pasadena, CA, 91106, United States
Frederick D. Newman
Affiliation:
[email protected], Emcore Photovoltaics, Albuquerque, NM, 87123, United States
Harry A. Atwater
Affiliation:
[email protected], California Institute of Technology, Thomas J. Watson Laboratory of Applied Physics, Mail Stop Code 128-95, 1200 E. California Blvd, Pasadena, CA, 91125, United States
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Abstract

InP/Si engineered substrates formed by wafer bonding and layer transfer have the potential to significantly reduce the cost and weight of III-V compound semiconductor solar cells. InP/Si substrates were prepared by He implantation of InP prior to bonding to a thermally oxidized Si substrate and annealing to exfoliate an InP thin film. Following thinning to remove damage caused by the implantation and exfoliation from the surface of the InP transferred film, InGaAs solar cells lattice-matched to bulk InP were grown on those substrates using metal-organic chemical vapor deposition. The photovoltaic current-voltage characteristics of the InGaAs cells fabricated on the wafer-bonded InP/Si substrates were comparable to those synthesized on commercially available epi-ready InP substrates, thus providing an initial demonstration of wafer-bonded InP/Si substrates as an alternative to bulk InP substrates for solar cell applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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